Laser annealing of amorphous germanium on silicon-germanium source/drain for strain and performance enhancement in pMOSFETs

IEEE Electron Device Letters

Volumn 29, Issue 8, 2008, Pages 885-888

  Liu, Fangyue ^a   Wong, Hoong Shing ^a   Ang, Kah Wee ^a   Zhu, Ming ^a   Wang, Xincai ^b   Lai, Doreen Mei Ying ^c   Lim, Poh Chong ^c   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b SINGAPORE INSTITUTE OF MANUFACTURING TECHNOLOGY   (Singapore)

^c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

Germanium (Ge) enrichment; Laser annealing (LA); Strained transistor

Indexed keywords

ANNEALING; BICMOS TECHNOLOGY; GERMANIUM; LASERS; MIXING; NONMETALS; SEMICONDUCTING SILICON COMPOUNDS; SILICON;

AMORPHOUS GERMANIUM; GE CONTENT; GERMANIUM (GE) ENRICHMENT; LASER ANNEALING; LASER ANNEALING (LA); LASER-INDUCED; LOCAL MELTING; P-MOSFETS; PERFORMANCE ENHANCEMENTS; SILICON-GERMANIUM; STRAINED TRANSISTOR;

AMORPHOUS SILICON;

EID: 48649104694     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2001029     Document Type: Article

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