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Volumn , Issue , 2007, Pages 333-336

Very low Vt [Ir-Hf]/HfLaO CMOS using novel self-aligned low temperature shallow junctions

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DEVICES;

EID: 50249162020     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4418939     Document Type: Conference Paper
Times cited : (33)

References (9)
  • 3
    • 4544326575 scopus 로고    scopus 로고
    • High mobility and excellent electrical stability of MOSFETs using a novel HfTaO gate dielectric
    • X. Yu, C. Zu, X. P. Wang, M. -F. Li, A. Chin, A. Y. Du, W. D. Wang, and D. L. Kwong, "High mobility and excellent electrical stability of MOSFETs using a novel HfTaO gate dielectric," in VLSI Symp. Tech. Dig., 2004, pp. 110-111.
    • (2004) VLSI Symp. Tech. Dig , pp. 110-111
    • Yu, X.1    Zu, C.2    Wang, X.P.3    Li, M.-F.4    Chin, A.5    Du, A.Y.6    Wang, W.D.7    Kwong, D.L.8
  • 6
    • 21644466972 scopus 로고    scopus 로고
    • Dual workfunction Ni-silicide/HfSiON gate stacks by phase-controlled full-silicidation (PC-FUSI) technique for 45nm-node LSTP and LOP devices
    • K. Takahashi, K. Manabe, T. Ikarashi, N. Ikarashi, T. Hase, T. Yoshihara, H. Watanabe, T. Tatsumi, and Y. Mochizuki, "Dual workfunction Ni-silicide/HfSiON gate stacks by phase-controlled full-silicidation (PC-FUSI) technique for 45nm-node LSTP and LOP devices," in IEDM Tech. Dig., 2004, pp. 91-94.
    • (2004) IEDM Tech. Dig , pp. 91-94
    • Takahashi, K.1    Manabe, K.2    Ikarashi, T.3    Ikarashi, N.4    Hase, T.5    Yoshihara, T.6    Watanabe, H.7    Tatsumi, T.8    Mochizuki, Y.9
  • 7
    • 0033725608 scopus 로고    scopus 로고
    • Ultra low energy arsenic implant limits on sheet resistance and junction depth
    • R. Kasnavi, P. B. Griffin, and J. D. Plummer, "Ultra low energy arsenic implant limits on sheet resistance and junction depth," in Symp. On VLSI Tech. Dig., 2000, pp. 112-113.
    • (2000) Symp. On VLSI Tech. Dig , pp. 112-113
    • Kasnavi, R.1    Griffin, P.B.2    Plummer, J.D.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.