-
1
-
-
0026835667
-
Performance of thin-film transistors on polysilicon films grown by low-pressure chemical vapor deposition at various conditions
-
Mar
-
C. A. Dimitriadis, P. Coxon, L. Dozsa, L. Papaddimitrious, and N. Economou, "Performance of thin-film transistors on polysilicon films grown by low-pressure chemical vapor deposition at various conditions," IEEE Trans. Electron Devices, vol. 39, no. 3, pp. 598-606, Mar. 1992.
-
(1992)
IEEE Trans. Electron Devices
, vol.39
, Issue.3
, pp. 598-606
-
-
Dimitriadis, C.A.1
Coxon, P.2
Dozsa, L.3
Papaddimitrious, L.4
Economou, N.5
-
2
-
-
0036611243
-
Investigation of inductively coupled plasma gate oxide on low temperature polycrystalline-silicon TFTs
-
Jun
-
C. H. Tseng, T. K. Chang, F. T. Chu, J. M. Shieh, B. T. Dai, H. C. Cheng, and A. Chin, "Investigation of inductively coupled plasma gate oxide on low temperature polycrystalline-silicon TFTs," IEEE Electron Device Lett., vol. 23, no. 6, pp. 333-335, Jun. 2002.
-
(2002)
IEEE Electron Device Lett
, vol.23
, Issue.6
, pp. 333-335
-
-
Tseng, C.H.1
Chang, T.K.2
Chu, F.T.3
Shieh, J.M.4
Dai, B.T.5
Cheng, H.C.6
Chin, A.7
-
3
-
-
0002957505
-
Thin-film transistors fabricated with poly-Si films crystallized at low temperature by microwave annealing
-
Jan
-
Y. W. Choi, J. N. Lee, T. W. Jang, and B. T. Ahn, "Thin-film transistors fabricated with poly-Si films crystallized at low temperature by microwave annealing," IEEE Electron Device Lett., vol. 20, no. 1, pp. 2-4, Jan. 1999.
-
(1999)
IEEE Electron Device Lett
, vol.20
, Issue.1
, pp. 2-4
-
-
Choi, Y.W.1
Lee, J.N.2
Jang, T.W.3
Ahn, B.T.4
-
4
-
-
0033352172
-
Effects of plasma treatments, substrate types, and crystallization methods on performance and reliability of low temperature polysilicon TFTs
-
C. W. Lin, M. Z. Yang, C. C. Yeh, L. J. Cheng, T. Y. Huang, H. C. Cheng, H. C. Lin, T. S. Chao, and C. Y. Chang, "Effects of plasma treatments, substrate types, and crystallization methods on performance and reliability of low temperature polysilicon TFTs," in IEDM Tech. Dig. 1999, pp. 305-308.
-
(1999)
IEDM Tech. Dig
, pp. 305-308
-
-
Lin, C.W.1
Yang, M.Z.2
Yeh, C.C.3
Cheng, L.J.4
Huang, T.Y.5
Cheng, H.C.6
Lin, H.C.7
Chao, T.S.8
Chang, C.Y.9
-
5
-
-
0041886628
-
Electrical characteristics of low temperature polysilicon TFT with a novel TEOS/oxynitride stack gate dielectric
-
Aug
-
K. M. Chang, W. C. Yang, and C. P. Tsai, "Electrical characteristics of low temperature polysilicon TFT with a novel TEOS/oxynitride stack gate dielectric," IEEE Electron Device Lett., vol. 24, no. 8, pp. 512-514, Aug. 2003.
-
(2003)
IEEE Electron Device Lett
, vol.24
, Issue.8
, pp. 512-514
-
-
Chang, K.M.1
Yang, W.C.2
Tsai, C.P.3
-
6
-
-
20544463241
-
3 as the gate dielectric
-
Jun
-
3 as the gate dielectric," IEEE Electron Device Lett., vol. 26, no. 6, pp. 384-386, Jun. 2005.
-
(2005)
IEEE Electron Device Lett
, vol.26
, Issue.6
, pp. 384-386
-
-
Hung, B.F.1
Chiang, K.C.2
Huang, C.C.3
Chin, A.4
McAlister, S.P.5
-
7
-
-
0032637539
-
Pentacene organic thin-film transistors for circuit and display applications
-
Jun
-
H. Klauk, D. J. Gundlach, J. A. Nichols, and T. N. Jackson, "Pentacene organic thin-film transistors for circuit and display applications," IEEE Trans. Electron Devices, vol. 46, no. 6, pp. 1258-1263, Jun. 1999.
-
(1999)
IEEE Trans. Electron Devices
, vol.46
, Issue.6
, pp. 1258-1263
-
-
Klauk, H.1
Gundlach, D.J.2
Nichols, J.A.3
Jackson, T.N.4
-
8
-
-
33244469947
-
High-resolution full-color LCD driven by OTFTs using novel passivation film
-
Mar
-
M. Kawasaki, S. Imazeki, M. Ando, Y. Sekiguchi, S. Hirota, S. Uemura, and T. Kamata, "High-resolution full-color LCD driven by OTFTs using novel passivation film," IEEE Trans. Electron Devices, vol. 53, no. 3, pp. 435-441, Mar. 2006.
-
(2006)
IEEE Trans. Electron Devices
, vol.53
, Issue.3
, pp. 435-441
-
-
Kawasaki, M.1
Imazeki, S.2
Ando, M.3
Sekiguchi, Y.4
Hirota, S.5
Uemura, S.6
Kamata, T.7
-
9
-
-
26444463789
-
Pentacene TFT driven AM OLED displays
-
Sep
-
L. Zhou, S. Park, B. Bai, J. Sun, S. C. Wu, T. N. Jackson, S. Nelson, D. Freeman, and Y. Hong, "Pentacene TFT driven AM OLED displays," IEEE Electron Device Lett., vol. 26, no. 9, pp. 640-642, Sep. 2005.
-
(2005)
IEEE Electron Device Lett
, vol.26
, Issue.9
, pp. 640-642
-
-
Zhou, L.1
Park, S.2
Bai, B.3
Sun, J.4
Wu, S.C.5
Jackson, T.N.6
Nelson, S.7
Freeman, D.8
Hong, Y.9
-
10
-
-
2442623512
-
Schottky-barrier S/D MOSFETs with high-k gate dielectrics and metal-gate electrode
-
May
-
S. Zhu, H. Y. Yu, S. J. Whang, J. H. Chen, C. Shen, C. Zhu, S. J. Lee, M. F. Li, D. S. H. Chan, W. J. Yoo, A. Du, C. H. Tung, J. Singh, A. Chin, and D. L. Kwong, "Schottky-barrier S/D MOSFETs with high-k gate dielectrics and metal-gate electrode," IEEE Electron Device Lett., vol. 25, no. 5, pp. 268-270, May 2004.
-
(2004)
IEEE Electron Device Lett
, vol.25
, Issue.5
, pp. 268-270
-
-
Zhu, S.1
Yu, H.Y.2
Whang, S.J.3
Chen, J.H.4
Shen, C.5
Zhu, C.6
Lee, S.J.7
Li, M.F.8
Chan, D.S.H.9
Yoo, W.J.10
Du, A.11
Tung, C.H.12
Singh, J.13
Chin, A.14
Kwong, D.L.15
-
11
-
-
41149167208
-
Dual metal gates with band-edge work functions on novel HfLaO high-κ gate dielectric
-
X. P. Wang, C. Shen, M.-F. Li, H. Y. Yu, Y. Sun, Y. P. Feng, A. Lim, H. W. Sik, A. Chin, Y. C. Yeo, P. Lo, and D. L. Kwong, "Dual metal gates with band-edge work functions on novel HfLaO high-κ gate dielectric," in VLSI Symp. Tech. Dig., 2006, pp. 12-13.
-
(2006)
VLSI Symp. Tech. Dig
, pp. 12-13
-
-
Wang, X.P.1
Shen, C.2
Li, M.-F.3
Yu, H.Y.4
Sun, Y.5
Feng, Y.P.6
Lim, A.7
Sik, H.W.8
Chin, A.9
Yeo, Y.C.10
Lo, P.11
Kwong, D.L.12
-
12
-
-
46049092232
-
3Si-TaN]/HfLaON CMOS with large work-function difference
-
3Si-TaN]/HfLaON CMOS with large work-function difference," in IEDM Tech. Dig., 2006, pp. 617-620.
-
(2006)
IEDM Tech. Dig
, pp. 617-620
-
-
Wu, C.H.1
Hung, B.F.2
Chin, A.3
Wang, S.J.4
Wang, X.P.5
Li, M.-F.6
Zhu, C.7
Jin, Y.8
Tao, H.J.9
Chen, S.C.10
Liang, M.S.11
-
13
-
-
34447278109
-
th tunability for metal-gated MOS devices with HfLaO gate dielectrics
-
Apr
-
th tunability for metal-gated MOS devices with HfLaO gate dielectrics," IEEE Electron Device Lett., vol. 28, no. 4, pp. 258-260, Apr. 2007.
-
(2007)
IEEE Electron Device Lett
, vol.28
, Issue.4
, pp. 258-260
-
-
Wang, X.P.1
Yu, H.Y.2
Li, M.-F.3
Zhu, C.X.4
Biesemans, S.5
Chin, A.6
Sun, Y.Y.7
Feng, Y.P.8
Lim, A.9
Yeo, Y.-C.10
Loh, W.Y.11
Lo, G.Q.12
Kwong, D.-L.13
-
14
-
-
33847643918
-
Lanthanide and Ir-based dual metal-gate/HfAlON CMOS with large work-function difference
-
D. S. Yu, A. Chin, C. H. Wu, M.-F. Li, C. Zhu, S. J. Wang, W. J. Yoo, B. F. Hung, and S. P. McAlister, "Lanthanide and Ir-based dual metal-gate/HfAlON CMOS with large work-function difference," in IEDM Tech. Dig. 2005, pp. 649-652.
-
(2005)
IEDM Tech. Dig
, pp. 649-652
-
-
Yu, D.S.1
Chin, A.2
Wu, C.H.3
Li, M.-F.4
Zhu, C.5
Wang, S.J.6
Yoo, W.J.7
Hung, B.F.8
McAlister, S.P.9
-
15
-
-
36648998773
-
Improved high-temperature leakage in high-density MIM capacitors by using a TiLaO dielectric and an Ir electrode
-
Dec
-
C. H. Cheng, H. C. Pan, C. N. Hsiao, C. P. Chou, S. P. McAlister, and A. Chin, "Improved high-temperature leakage in high-density MIM capacitors by using a TiLaO dielectric and an Ir electrode," IEEE Electron Device Lett., vol. 28, no. 12, pp. 1095-1097, Dec. 2007.
-
(2007)
IEEE Electron Device Lett
, vol.28
, Issue.12
, pp. 1095-1097
-
-
Cheng, C.H.1
Pan, H.C.2
Hsiao, C.N.3
Chou, C.P.4
McAlister, S.P.5
Chin, A.6
-
16
-
-
34547756133
-
3/TaN capacitors for analog and RF applications
-
3/TaN capacitors for analog and RF applications," in VLSI Symp. Tech. Dig., 2006, pp. 126-127.
-
(2006)
VLSI Symp. Tech. Dig
, pp. 126-127
-
-
Chiang, K.C.1
Huang, C.C.2
Chin, A.3
Chen, W.J.4
Kao, H.L.5
Hong, M.6
Kwo, J.7
-
17
-
-
33846009621
-
3 metal-insulator-metal capacitors for analog applications
-
Sep
-
3 metal-insulator-metal capacitors for analog applications," IEEE Trans. Electron Devices vol. 53, no. 9, pp. 2312-2319, Sep. 2006.
-
(2006)
IEEE Trans. Electron Devices
, vol.53
, Issue.9
, pp. 2312-2319
-
-
Chiang, K.C.1
Huang, C.C.2
Chin, A.3
Chen, G.L.4
Chen, W.J.5
Wu, Y.H.6
McAlister, S.P.7
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