A low-cost method of forming epitaxy SiGe on Si substrate by laser annealing

Applied Physics Letters

Volumn 94, Issue 8, 2009, Pages

  Ong, C Y ^a   Pey, K L ^a   Ong, K K ^b   Tan, D X M ^a   Wang, X C ^c   Zheng, H Y ^c   Ng, C M ^b   Chan, L ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^c SINGAPORE INSTITUTE OF MANUFACTURING TECHNOLOGY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; BORON; BORON COMPOUNDS; CRYSTAL GROWTH; FORMING; GERMANIUM; LASERS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GERMANIUM COMPOUNDS; SILICON ALLOYS; SUBSTRATES;

BORON ACTIVATIONS; HIGH TEMPERATURES; LASER ANNEALING; LASER FLUENCE; LASER-INDUCED CRYSTALLIZATIONS; LIQUID-PHASE EPITAXIAL; MELTED LAYERS; POLY-CRYSTALLINE; RECRYSTALLIZATION PROCESS; SI (100) SUBSTRATES; SI SUBSTRATES; SIGE LAYERS; SILICON GERMANIUMS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 61349153504     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3086881     Document Type: Article

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