SCOPUS 정보 검색 플랫폼

Applied Physics A: Materials Science and Processing

Volumn 103, Issue 1, 2011, Pages 149-158

Structural and electrical properties of sol-gel derived Ge nanocrystals in SiO2 films

(5) Knebel, S a Kyriakidou, A a Bracht, H a Rosner H a Wilde, G a

a UNIVERSITY OF MÜNSTER (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING CONDITION; BORON-DOPED SILICON; CAPACITANCE VOLTAGE MEASUREMENTS; CONVENTIONAL TRANSMISSION ELECTRON MICROSCOPIES; DENUDED ZONES; ELECTRICAL PROPERTY; ENERGY DISPERSIVE X-RAY; FORMING GAS; FREE SURFACES; GE NANOCRYSTALS; GE NANOPARTICLES; GLASS FILMS; HIGH RESOLUTION; METAL OXIDE SEMICONDUCTOR STRUCTURES; PARTICLE DENSITIES; SHAPE AND SIZE; SI SUBSTRATES; SILICATE GLASS; SILICON SUBSTRATES; STORAGE CHARACTERISTIC; STRUCTURAL AND ELECTRICAL PROPERTIES; SYNTHESIS PROCEDURE; THIN LAYERS; TRAPPED CHARGE;

ANNEALING; BORON; ELECTRIC PROPERTIES; GELS; GLASS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; NANOCRYSTALS; NANOPARTICLES; SEMICONDUCTOR GROWTH; SILICATES; SILICON OXIDES; SOL-GEL PROCESS; SOL-GELS; SOLS; SUBSTRATES;

GERMANIUM;

EID: 79953029926 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-010-6156-4 Document Type: Article

Times cited : (11)

References (36)

1
- 36449008130
- A silicon nanocrystals based memory
- DOI 10.1063/1.116085, PII S0003695196003105
- S. Tiwari F. Rana H. Hanafi A. Hartstein E.F. Crabbé K. Chan 1996 Appl. Phys. Lett. 68 1377 10.1063/1.116085 1996ApPhL..68.1377T (Pubitemid 126688256)
- (1996) Applied Physics Letters , vol.68 , Issue.10 , pp. 1377-1379
- Tiwari, S.¹ Rana, F.² Hanafi, H.³ Hartstein, A.⁴ Crabbe, E.F.⁵ Chan, K.⁶

2
- 0032117132
- 10.1016/S0168-583X(98)00283-3 1998NIMPB.142.338M
- A. Markwitz B. Schmidt W. Matz R. Grötzschel A. Mücklich 1998 Nucl. Instrum. Methods B 142 338 10.1016/S0168-583X(98)00283-3 1998NIMPB.142..338M
- (1998) Nucl. Instrum. Methods B , vol.142 , pp. 338
- Markwitz, A.¹ Schmidt, B.² Matz, W.³ Grötzschel, R.⁴ Mücklich, A.⁵

3
- 79955984698
- Observation of memory effect in germanium nanocrystals embedded in an amorphous silicon oxide matrix of a metal-insulator-semiconductor structure
- DOI 10.1063/1.1459760
- W.K. Choi W.K. Chim C.L. Heng L.W. Teo V. Ho V. Ng D.A. Antoniadis E.A. Fitzgerald 2002 Appl. Phys. Lett. 80 2014 10.1063/1.1459760 2002ApPhL..80.2014C (Pubitemid 34326271)
- (2002) Applied Physics Letters , vol.80 , Issue.11 , pp. 2014
- Choi, W.K.¹ Chim, W.K.² Heng, C.L.³ Teo, L.W.⁴ Ho, V.⁵ Ng, V.⁶ Antoniadis, D.A.⁷ Fitzgerald, E.A.⁸

4
- 0037463333
- 10.1063/1.1555709 2003ApPhL.82.1212K
- A. Kanjilal J. Lundsgaard Hansen P. Gaiduk A. Nylandsted Larsen N. Cherkashin A. Claverie P. Normand E. Kapelanakis D. Skarlatos D. Tsoukalas 2003 Appl. Phys. Lett. 82 1212 10.1063/1.1555709 2003ApPhL..82.1212K
- (2003) Appl. Phys. Lett. , vol.82 , pp. 1212
- Kanjilal, A.¹ Lundsgaard Hansen, J.² Gaiduk, P.³ Nylandsted Larsen, A.⁴ Cherkashin, N.⁵ Claverie, A.⁶ Normand, P.⁷ Kapelanakis, E.⁸ Skarlatos, D.⁹ Tsoukalas, D.¹⁰

5
- 32244443321
- 2
- DOI 10.1007/s00339-005-3464-1
- S. Aǧan A. Çelik-Aktaş J.M. Zuo A. Dana A. Aydinli 2006 Appl. Phys. A 83 107 10.1007/s00339-005-3464-1 2006ApPhA..83..107A (Pubitemid 43210389)
- (2006) Applied Physics A: Materials Science and Processing , vol.83 , Issue.1 , pp. 107-110
- Agan, S.¹ Celik-Aktas, A.² Zuo, J.M.³ Dana, A.⁴ Aydinli, A.⁵

6
- 35949006801
- 10.1103/PhysRevB.51.1658 1995PhRvB.51.1658M
- Y. Maeda 1995 Phys. Rev. B 51 1658 10.1103/PhysRevB.51.1658 1995PhRvB..51.1658M
- (1995) Phys. Rev. B , vol.51 , pp. 1658
- Maeda, Y.¹

7
- 17544367786
- Germanium diffusion and nanocrystal formation in silicon oxide on silicon substrate under rapid thermal annealing
- DOI 10.1063/1.1891290, 143114
- W.K. Choi V. Ho V. Ng Y.W. Ho S.P. Ng W.K. Chim 2005 Appl. Phys. Lett. 86 143114 10.1063/1.1891290 2005ApPhL..86n3114C (Pubitemid 40552468)
- (2005) Applied Physics Letters , vol.86 , Issue.14 , pp. 1-3
- Choi, W.K.¹ Ho, V.² Ng, V.³ Ho, Y.W.⁴ Ng, S.P.⁵ Chim, W.K.⁶

8
- 38549108397
- 10.1103/PhysRevB.77.014107 2008PhRvB.77a4107B
- V. Beyer J.V. Borany 2008 Phys. Rev. B 77 014107 10.1103/PhysRevB.77. 014107 2008PhRvB..77a4107B
- (2008) Phys. Rev. B , vol.77 , pp. 014107
- Beyer, V.¹ Borany, J.V.²

9
- 0032003897
- 1998PMagB.77.363D
- C. Duverger S. Turrell M. Bouazaoui F. Tonelli M. Montagna M. Ferrari 1998 Philos. Mag. B 77 363 1998PMagB..77..363D
- (1998) Philos. Mag. B , vol.77 , pp. 363
- Duverger, C.¹ Turrell, S.² Bouazaoui, M.³ Tonelli, F.⁴ Montagna, M.⁵ Ferrari, M.⁶

10
- 33751168481
- 2 thick films from TEOG and DEOS and investigation of the 5 eV band
- DOI 10.1088/0022-3727/39/6/025, PII S0022372706088929, 025
- C. Jing J. Hou Y. Zhang 2006 J. Phys. D 39 1174 10.1088/0022-3727/39/6/ 025 2006JPhD...39.1174J (Pubitemid 44773277)
- (2006) Journal of Physics D: Applied Physics , vol.39 , Issue.6 , pp. 1174-1180
- Jing, C.¹ Hou, J.² Zhang, Y.³

11
- 0028550702
- 10.1063/1.112630 1994ApPhL.65.2545N
- M. Nogami Y. Abe 1994 Appl. Phys. Lett. 65 2545 10.1063/1.112630 1994ApPhL..65.2545N
- (1994) Appl. Phys. Lett. , vol.65 , pp. 2545
- Nogami, M.¹ Abe, Y.²

12
- 38549113664
- T.F. Stoica M. Gartner V.S. Teodorescu T. Stoica 2007 J. Optoelectron. Adv. Mater. 9 3271
- (2007) J. Optoelectron. Adv. Mater. , vol.9 , pp. 3271
- Stoica, T.F.¹ Gartner, M.² Teodorescu, V.S.³ Stoica, T.⁴

13
- 41449102786
- Synthesis and photoluminescent properties of size-controlled germanium nanocrystals from phenyl trichlorogermane-derived polymers
- DOI 10.1021/ja710286a
- E.J. Henderson C.M. Hessel J.G.C. Veinot 2008 J. Am. Chem. Soc. 130 3624 10.1021/ja710286a (Pubitemid 351456067)
- (2008) Journal of the American Chemical Society , vol.130 , Issue.11 , pp. 3624-3632
- Henderson, E.J.¹ Hessel, C.M.² Veinot, J.G.C.³

14
- 0003484845
- Academic San Diego
- C.J. Brinker, G.W. Scherer, Sol-gel Science, The Physics and Chemistry of Sol-gel Processing (Academic, San Diego, 1990)
- (1990) Sol-gel Science, the Physics and Chemistry of Sol-gel Processing
- Brinker, C.J.¹ Scherer, G.W.²

15
- 0023964473
- 10.1002/jemt.1060080206
- T. Malis S. Cheng R.F. Egerton 1988 J. Electron Microsc. Tech. 8 193 10.1002/jemt.1060080206
- (1988) J. Electron Microsc. Tech. , vol.8 , pp. 193
- Malis, T.¹ Cheng, S.² Egerton, R.F.³

16
- 0025405402
- P.A. Crozier 1990 Philos. Mag. 61 311
- (1990) Philos. Mag. , vol.61 , pp. 311
- Crozier, P.A.¹

17
- 0024769734
- 10.1016/0921-5093(89)90539-X
- C. Schlesier E. Nembach 1989 Mater. Sci. Eng. A 119 199 10.1016/0921-5093(89)90539-X
- (1989) Mater. Sci. Eng. A , vol.119 , pp. 199
- Schlesier, C.¹ Nembach, E.²

18
- 32144443692
- 2
- DOI 10.1007/s00339-005-3479-7
- J. Skov Jensen T.P. Leervad Pedersen R. Pereira J. Chevallier J. Lundsgaard Hansen B. Bech Nielsen A. Nylandsted Larsen 2006 Appl. Phys. A 83 41 10.1007/s00339-005-3479-7 2006ApPhA..83...41J (Pubitemid 43207819)
- (2006) Applied Physics A: Materials Science and Processing , vol.83 , Issue.1 , pp. 41-48
- Jensen, J.S.¹ Pedersen, T.P.L.² Pereira, R.³ Chevallier, J.⁴ Hansen, J.L.⁵ Nielsen, B.B.⁶ Larsen, A.N.⁷

19
- 77951609830
- 10.1063/1.3380853 2010JAP.107g3520K
- R. Kube H. Bracht J. Lundsgaard Hansen A. Nylandsted Larsen E.E. Haller S. Paul W. Lerch 2010 J. Appl. Phys. 107 073520 10.1063/1.3380853 2010JAP...107g3520K
- (2010) J. Appl. Phys. , vol.107 , pp. 073520
- Kube, R.¹ Bracht, H.² Lundsgaard Hansen, J.³ Nylandsted Larsen, A.⁴ Haller, E.E.⁵ Paul, S.⁶ Lerch, W.⁷

20
- 0038481980
- 10.1063/1.1575501 2003JAP.93.9988T
- G. Taraschi S. Saini W.W. Fan L.C. Kimerling E.A. Fitzgerald 2003 J. Appl. Phys. 93 9988 10.1063/1.1575501 2003JAP....93.9988T
- (2003) J. Appl. Phys. , vol.93 , pp. 9988
- Taraschi, G.¹ Saini, S.² Fan, W.W.³ Kimerling, L.C.⁴ Fitzgerald, E.A.⁵

21
- 33646724068
- Diffusion of silicon in crystalline germanium
- DOI 10.1088/0268-1242/21/6/008, PII S0268124206158502
- H.H. Silvestri H. Bracht J.L. Hansen A.N. Larsen E.E. Haller 2006 Semicond. Sci. Technol. 21 758 10.1088/0268-1242/21/6/008 2006SeScT..21..758S (Pubitemid 43745875)
- (2006) Semiconductor Science and Technology , vol.21 , Issue.6 , pp. 758-762
- Silvestri, H.H.¹ Bracht, H.² Hansen, J.L.³ Larsen, A.N.⁴ Haller, E.E.⁵

22
- 0003998388
- D.R. Lide (eds). 86 CRC Press Boca Raton
- D.R. Lide (ed.), CRC Handbook of Chemistry and Physics, 86th edn. (CRC Press, Boca Raton, 2005)
- (2005) CRC Handbook of Chemistry and Physics

23
- 33749578036
- Large melting-point hysteresis of Ge nanocrystals embedded in SiO2
- DOI 10.1103/PhysRevLett.97.155701
- Q. Xu I.D. Sharp C.W. Yuan D.O. Yi C.Y. Liao A.M. Glaeser A.M. Minor J.W. Beeman M.C. Ridgway P. Kluth J.W. Ager III D.C. Chrzan E.E. Haller 2006 Phys. Rev. Lett. 97 155701 10.1103/PhysRevLett.97.155701 2006PhRvL..97o5701X (Pubitemid 44537107)
- (2006) Physical Review Letters , vol.97 , Issue.15 , pp. 155701
- Xu, Q.¹ Sharp, I.D.² Yuan, C.W.³ Yi, D.O.⁴ Liao, C.Y.⁵ Glaeser, A.M.⁶ Minor, A.M.⁷ Beeman, J.W.⁸ Ridgway, M.C.⁹ Kluth, P.¹⁰ Ager III, J.W.¹¹ Chrzan, D.C.¹² Haller, E.E.¹³

24
- 0003610719
- Wiley-Interscience New York
- E.H. Nicollian, J.R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology (Wiley-Interscience, New York, 1982)
- (1982) MOS (Metal Oxide Semiconductor) Physics and Technology
- Nicollian, E.H.¹ Brews, J.R.²

25
- 0004005306
- 2 Wiley-Interscience New York
- S.M. Sze, Physics of Semiconductor Devices, 2nd edn. (Wiley-Interscience, New York, 1981)
- (1981) Physics of Semiconductor Devices
- Sze, S.M.¹

26
- 0347653376
- 10.1049/el:20031146
- K. Das S. Maikap A. Dhar B.K. Mathur S.K. Ray 2003 Electron. Lett. 39 1865 10.1049/el:20031146
- (2003) Electron. Lett. , vol.39 , pp. 1865
- Das, K.¹ Maikap, S.² Dhar, A.³ Mathur, B.K.⁴ Ray, S.K.⁵

27
- 17444410859
- Electrical behavior of size-controlled Si nanocrystals arranged as single layers
- DOI 10.1007/s00339-005-3220-6
- T.Z. Lu J. Shen B. Mereu M. Alexe R. Scholz V. Talalaev M. Zacharias 2005 Appl. Phys. A 80 1631 10.1007/s00339-005-3220-6 2005ApPhA..80.1631L (Pubitemid 40536735)
- (2005) Applied Physics A: Materials Science and Processing , vol.80 , Issue.8 , pp. 1631-1634
- Lu, T.Z.¹ Shen, J.² Mereu, B.³ Alexe, M.⁴ Scholz, R.⁵ Talalaev, V.⁶ Zacharias, M.⁷

28
- 33749817447
- S. Kim S.-H. Choi C.J. Park K.H. Cho H.Y. Cho R.G. Elliman 2006 J. Korean Phys. Soc. 49 959
- (2006) J. Korean Phys. Soc. , vol.49 , pp. 959
- Kim, S.¹ Choi, S.-H.² Park, C.J.³ Cho, K.H.⁴ Cho, H.Y.⁵ Elliman, R.G.⁶

29
- 0003682151
- 10.1063/1.120294 1997ApPhL.71.3215V
- J. v. Borany R. Grotzschel K.H. Heinig A. Markwitz W. Matz B. Schmidt W. Skorupa 1997 Appl. Phys. Lett. 71 3215 10.1063/1.120294 1997ApPhL..71.3215V
- (1997) Appl. Phys. Lett. , vol.71 , pp. 3215
- Borany J, V.¹ Grotzschel, R.² Heinig, K.H.³ Markwitz, A.⁴ Matz, W.⁵ Schmidt, B.⁶ Skorupa, W.⁷

30
- 41549158270
- Electrical properties of metal-oxide-semiconductor structures with low-energy Ge-implanted and annealed thin gate oxides
- DOI 10.1063/1.2888537
- E. Kapetanakis P. Normand P. Holliger 2008 J. Appl. Phys. 103 064515 10.1063/1.2888537 2008JAP...103f4515K (Pubitemid 351469659)
- (2008) Journal of Applied Physics , vol.103 , Issue.6 , pp. 064515
- Kapetanakis, E.¹ Normand, P.² Holliger, P.³

31
- 33645513421
- 10.1063/1.2168249 2006JAP.99c6101P
- C.J. Park H.Y. Cho S. Kim S.-H. Choi R.G. Elliman J.H. Han C. Kim H.N. Hwang C.C. Hwang 2006 J. Appl. Phys. 99 036101 10.1063/1.2168249 2006JAP....99c6101P
- (2006) J. Appl. Phys. , vol.99 , pp. 036101
- Park, C.J.¹ Cho, H.Y.² Kim, S.³ Choi, S.-H.⁴ Elliman, R.G.⁵ Han, J.H.⁶ Kim, C.⁷ Hwang, H.N.⁸ Hwang, C.C.⁹

32
- 79953027846
- M. Bassler, Doctoral thesis, University Erlangen-Nürnberg (2000)
- M. Bassler, Doctoral thesis, University Erlangen-Nürnberg (2000)

33
- 1842534410
- 10.1007/s00339-003-2482-0 2004ApPhA.78.1181H
- C.L. Heng W.W. Tjiu T.G. Finstad 2004 Appl. Phys. A 78 1181 10.1007/s00339-003-2482-0 2004ApPhA..78.1181H
- (2004) Appl. Phys. A , vol.78 , pp. 1181
- Heng, C.L.¹ Tjiu, W.W.² Finstad, T.G.³

34
- 79956048655
- Size control and charge storage mechanism of germanium nanocrystals in a metal-insulator-semiconductor structure
- DOI 10.1063/1.1519355
- L.W. Teo W.K. Choi W.K. Chim V. Ho C.M. Moey M.S. Tay C.L. Heng Y. Lei D.A. Antoniadis E.A. Fitzgerald 2002 Appl. Phys. Lett. 81 3639 10.1063/1.1519355 2002ApPhL..81.3639T (Pubitemid 35427977)
- (2002) Applied Physics Letters , vol.81 , Issue.19 , pp. 3639
- Teo, L.W.¹ Choi, W.K.² Chim, W.K.³ Ho, V.⁴ Moey, C.M.⁵ Tay, M.S.⁶ Heng, C.L.⁷ Lei, Y.⁸ Antoniadis, D.A.⁹ Fitzgerald, E.A.¹⁰

35
- 40549122752
- Nonvolatile memories of Ge nanodots self-assembled by depositing ultrasmall amount Ge on Si O2 at room temperature
- DOI 10.1063/1.2892494
- S.H. Hong M.C. Kim P.S. Jeong S.-H. Choi Y.-S. Kim K.J. Kim 2008 Appl. Phys. Lett. 92 093124 10.1063/1.2892494 2008ApPhL..92i3124H (Pubitemid 351357437)
- (2008) Applied Physics Letters , vol.92 , Issue.9 , pp. 093124
- Hong, S.H.¹ Kim, M.C.² Jeong, P.S.³ Choi, S.-H.⁴ Kim, Y.-S.⁵ Kim, K.J.⁶

36
- 32944463015
- 2 films containing Ge nanocrystals produced by ion implantation and annealing
- DOI 10.1063/1.2175495
- C.J. Park K.H. Cho W.-C. Yang H.Y. Cho S.-H. Choi R.G. Elliman J.H. Han C. Kim 2006 Appl. Phys. Lett. 88 071916 10.1063/1.2175495 2006ApPhL..88g1916P (Pubitemid 43261806)
- (2006) Applied Physics Letters , vol.88 , Issue.7 , pp. 071916
- Park, C.J.¹ Cho, K.H.² Yang, W.-C.³ Cho, H.Y.⁴ Choi, S.-H.⁵ Elliman, R.G.⁶ Han, J.H.⁷ Kim, C.⁸

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.