Large melting-point hysteresis of Ge nanocrystals embedded in SiO2

Physical Review Letters

Volumn 97, Issue 15, 2006, Pages

  Xu, Q ^a,b   Sharp, I D ^a,b   Yuan, C W ^a,b   Yi, D O ^b,c   Liao, C Y ^a,b   Glaeser, A M ^a,b   Minor, A M ^b   Beeman, J W ^b   Ridgway, M C ^d   Kluth, P ^d   Ager III, J W ^b   Chrzan, D C ^a,b   Haller, E E ^a,b  

^a University of California ^*  (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

CLASSICAL NUCLEATION THEORY; MELTING-POINT HYSTERESIS;

EPITAXIAL GROWTH; GERMANIUM; HYSTERESIS; NUCLEATION; SILICA; TRANSMISSION ELECTRON MICROSCOPY;

NANOSTRUCTURED MATERIALS;

EID: 33749578036     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.97.155701     Document Type: Article

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