Metal-oxide-semiconductor structure with Ge nanocrystals for memory devices applications

Electronics Letters

Volumn 39, Issue 25, 2003, Pages 1865-1866

  Das, K ^a   Maikap, S ^a,b   Dhar, A ^a   Mathur, B K ^a   Ray, S K ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TUNNELING; EMISSION SPECTROSCOPY; MOS CAPACITORS; NANOSTRUCTURED MATERIALS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; SEMICONDUCTING GERMANIUM; SPUTTERING; TRANSMISSION ELECTRON MICROSCOPY;

GERMANIUM NANOCRYSTALS; METAL-OXIDE-SEMICONDUCTOR STRUCTURE; PHOTOLUMINESCENCE SPECTROSCOPY;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0347653376     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20031146     Document Type: Article

References (9)

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