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Applied Physics A: Materials Science and Processing

Volumn 78, Issue 8, 2004, Pages 1181-1186

Charge-storage effects in a metal-insulator-semi-conductor structure containing germanium nano-crystals formed by rapid thermal annealing of an electron-beam evaporated germanium layer

(3) Heng, C L a,b Tjiu, W W c Finstad, T G a

a UNIVERSITY OF OSLO (Norway)

b SINGAPORE MIT ALLIANCE (Singapore)

c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CRYSTALLINE MATERIALS; ELECTRON BEAMS; EVAPORATION; GERMANIUM; MOLECULAR STRUCTURE; NANOSTRUCTURED MATERIALS; RAPID THERMAL ANNEALING; RELAXATION PROCESSES; SEMICONDUCTOR MATERIALS;

CAPACITANCE TIME MEASUREMENTS; CHARGE STORAGE EFFECTS;

ELECTRIC INSULATORS;

EID: 1842534410 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s00339-003-2482-0 Document Type: Article

Times cited : (15)

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