Nonvolatile memories of Ge nanodots self-assembled by depositing ultrasmall amount Ge on Si O2 at room temperature

Applied Physics Letters

Volumn 92, Issue 9, 2008, Pages

  Hong, Seung Hui ^a   Kim, Min Choul ^a   Jeong, Pil Seong ^a   Choi, Suk Ho ^a   Kim, Yong Sung ^b   Kim, Kyung Joong ^b  

^a Kyung Hee University   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; HYSTERESIS; ION BEAMS; SILICA; SPUTTER DEPOSITION;

NANODOTS; NONVOLATILE MEMORIES; ROOM TEMPERATURE;

NONVOLATILE STORAGE;

EID: 40549122752     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2892494     Document Type: Article

References (20)

1. W. K. Choi, W. K. Chim, C. L. Heng, L. W. Teo, V. Ho, V. Ng, D. A. Antoniadis, and E. A. Fitzgerald, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1459760 80, 2014 (2002).
2. S. Kim, H.-S. Hwang, S.-H. Choi, and K. J. Kim, J. Korean Phys. Soc. KPSJAS 0374-4884 48, 108 (2006).
3. B. Eitan, P. Pavan, I. Bloom, E. Aloni, A. Frommer, and D. Finzi, IEEE Electron Device Lett. EDLEDZ 0741-3106 10.1109/55.877205 21, 543 (2000).
4. H. I. Hanafi, S. Tiwari, and I. Khan, IEEE Trans. Electron Devices IETDAI 0018-9383 10.1109/16.535349 43, 1553 (1996).
5. M. Kanoun, A. Souifi, T. Baron, and F. Mazen, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1751227 84, 5079 (2004).
6. Y. Maeda, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.51.1658 51, 1658 (1995).
7. Y. H. Kwon, C. J. Park, W. C. Lee, D. J. Fu, Y. Shon, T. W. Kang, C. Y. Hong, H. Y. Cho, and K. L. Wang, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1467617 80, 2502 (2002).
8. K. Das, M. NandaGoswami, R. Mahapatra, G. S. Kar, A. Dhar, H. N. Acharya, S. Maikap, J.-H. Lee, and S. K. Ray, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1646750 84, 1386 (2004).
9. C. J. Park, K. H. Cho, W.-C. Yang, H. Y. Cho, S.-H. Choi, R. G. Elliman, J. H. Han, and C. Kim, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2175495 88, 071916 (2006).
10. A. A. Shklyaev, M. Shibata, and M. Ichikawa, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.62.1540 62, 1540 (2000).
11. Y. Nakayama, S. Yamazaki, H. Okino, T. Hirahara, I. Matsuda, S. Hasegawa, and M. Ichikawa, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2784181 91, 123104 (2007).
12. B. Li, J. Liu, G. F. Liu, and J. A. Yarmoff, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2793687 91, 132107 (2007).
13. K. J. Kim, D. W. Moon, S.-H. Hong, S.-H. Choi, M.-S. Yang, J.-H. Jhe, and J. H. Shin, Thin Solid Films THSFAP 0040-6090 478, 21 (2005).
14. G. Kresse and J. Joubert, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.59.1758 59, 1758 (1999).
15. D. Vanderbilt, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.41.7892 41, 7892 (1990).
16. J. P. Perdew, J. A. Chevary, S. H. Vosko, K. A. Jackson, M. R. Pederson, D. J. Singh, and C. Fiolhais, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.46. 6671 46, 6671 (1992).
17. Q. Li, J. L. Krauss, S. Hersee, and S. M. Han, J. Phys. Chem. C JPCCCK 1932-7447 10.1021/jp062966o 111, 779 (2007).
18. Z. Tan, S. K. Samanta, W. J. Yoo, and S. Lee, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1846952 86, 013107 (2005).
19. W.-R. Chen, T.-C. Chang, Y.-T. Hsieh, S. M. Sze, and C.-Y. Chang, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2779931 91, 102106 (2007).
20. J. S. Oh, H. T. Oh, Y. H. Lee, Y. H. Yang, H. Y. Cho, S.-H. Choi, C. J. Park, and C. W. Kim, Proceedings of the IEEE Nanotechnology Materials and Devices Conference, 2006 (unpublished) p. 642.