Microstructural investigation of ion beam synthesised germanium nanoclusters embedded in SiO2 layers

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 142, Issue 3, 1998, Pages 338-348

  Markwitz, A ^a,b   Schmidt, B ^a   Matz, W ^a   Grotzschel R ^a   Mucklich A ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b GNS SCIENCE   (New Zealand)

Author keywords

Ge depth profiling; Ion implantation; Microstructure analysis; RBS; STEM EDX; TEM

Indexed keywords

AMORPHOUS FILMS; ANNEALING; BAND STRUCTURE; CRYSTAL MICROSTRUCTURE; ELECTRON TRANSITIONS; ION BEAMS; ION IMPLANTATION; LATTICE CONSTANTS; NANOSTRUCTURED MATERIALS; SILICA; SYNTHESIS (CHEMICAL); THERMAL EFFECTS;

DEPTH PROFILING;

SEMICONDUCTING GERMANIUM;

EID: 0032117132     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00283-3     Document Type: Article

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