Annealing temperature dependence of capacitance-voltage characteristics in Ge-nanocrystal-based nonvolatile memory structures

Journal of Applied Physics

Volumn 99, Issue 3, 2006, Pages

  Park, C J ^a,d   Cho, H Y ^a   Kim, S ^b   Choi, Suk Ho ^b   Elliman, R G ^c   Han, J H ^d   Kim, Chungwoo ^d   Hwang, H N ^e   Hwang, C C ^e  

^a Dongguk University   (South Korea)

^b Kyung Hee University   (South Korea)

^c AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^d Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^e Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE-VOLTAGE (C-V) CHARACTERISTICS; NONVOLATILE MEMORY; SYNCHROTRON-RADIATION PHOTOEMISSION SPECTROSCOPY;

ANNEALING; DATA STORAGE EQUIPMENT; ION IMPLANTATION; MOS DEVICES; SYNCHROTRON RADIATION; TRANSMISSION ELECTRON MICROSCOPY;

NANOSTRUCTURED MATERIALS;

EID: 33645513421     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2168249     Document Type: Article

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