Structural and electrical properties of silicon dioxide layers with embedded germanium nanocrystals grown by molecular beam epitaxy

Applied Physics Letters

Volumn 82, Issue 8, 2003, Pages 1212-1214

  Kanjilal, A ^a   Hansen, J Lundsgaard ^a   Gaiduk, P ^a   Larsen, A Nylandsted ^a   Cherkashin, N ^b   Claverie, A ^b   Normand, P ^c   Kapelanakis, E ^c   Skarlatos, D ^c   Tsoukalas, D ^c  

^a AARHUS UNIVERSITY   (Denmark)

^b CEMES CNRS   (France)

^c INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC PROPERTIES; GERMANIUM; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; SILICA; SILICON WAFERS; STRUCTURE (COMPOSITION); TRANSMISSION ELECTRON MICROSCOPY;

STORAGE EFFECTS;

NANOSTRUCTURED MATERIALS;

EID: 0037463333     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1555709     Document Type: Article

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