Ge dots embedded in silicon dioxide using sol-gel deposition

Journal of Optoelectronics and Advanced Materials

Volumn 9, Issue 10, 2007, Pages 3271-3274

  Stoica, T F ^a   Gartner, M ^b   Teodorescu, V S ^a   Stoica, T ^a  

^a NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

^b ACADEMY OF ROMANIAN SCIENTISTS   (Romania)

Author keywords

Ge dots; Silicon dioxide; Sol gel deposition

Indexed keywords

DEPOSITION; ELLIPSOMETRY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; SILICA; SOL-GEL PROCESS; SOL-GELS;

GE DOTS; HIGH TEMPERATURE; SI SUBSTRATES; SMALL CLUSTERS; SOL-GEL DEPOSITION; SPECTRAL ELLIPSOMETRY; TEMPERATURE EVOLUTION; VERSATILE METHODS;

GERMANIUM COMPOUNDS;

EID: 38549113664     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

References (12)

1. S. Lombarde B. De Salvo, C. Gerardi, T. Baron, Microelectron. Eng. 72, 388 (2004).
2. P. W. Li, W. M. Liao, D. M. T. Kuo, S. W. Lin, P. S. Chen, S. C. Lu, M-J. Tsai, Appl. Phys. Lett. 85, 1532 (2004).
3. H. K. Liou, P. Mei, U. Gennser, E. S. Yang, Appl. Phys. Lett. 59, 1200 (1991).
4. M. Zacharias, J. Blbing, M. Liihmann, J. Christen, Thin Solid Films 278, 32 (1996).
5. G. G. Qin, G. F. Bai, A. P. Li, S. Y. Ma, Y. K. Sun, B. R. Zhang, Z. C. Ma, W. H. Zong, Thin Solid Films 338-131 (1999).
6. H. Fukuda, T. Kobayashi, T. Endoh, S. Nomura, A. Sakai, Y. Ueda, Appl. Surf. Sci. 130-132, 776 (1998).
7. A. V. Kolobov, A. A. Shklyaev, H. Oyanagi, P. Fons, S. Yamasaki, M. Ichikawa, Appl. Phys. Lett. 78, 2563 (2001).
8. T. Stoica, E. Setter, Nanotechnology 17, 4912 (2006).
9. Charles K.F. Ho, K. Pita, N. Q. Ngo, C. H. Kam, Optics Express 13, 1049 (2005).
10. Charles K. F. Ho, Rajni, H. S. Djie, Kantisara Pita, Nam Quoc Ngo, T. Osipowicz, Applied Optics 46, 4397 (2007).
11. T. F. Stoica, M. Gartner, T. Stoica, M. Losurdo, V. S. Teodorescu, M. G. Blanchin, M. Zaharescu, J. Optoelectron. Adv. Mater. 7(5), 2353 (2005).
12. G. A. N. Connell, R. J. Temkin, W. Paul, Advances in Physics 22(5), 643 (1973).