Characterization of metal insulator metal electrical properties of electron cyclotron resonance plasma deposited Ta2O5

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 9 B, 2006, Pages 7345-7350

  Ono, Toshiro ^a   Kato, Koji ^a   Toyota, Hiroshi ^a   Fukuda, Yukio ^b   Jin, Yoshito ^c  

^a HIROSAKI UNIVERSITY   (Japan)

^b TOKYO UNIVERSITY OF SCIENCE   (Japan)

^c NTT CORPORATION   (Japan)

Author keywords

Breakdown field strength; ECR plasma sputtering; Leakage current; MIM capacitor; Ta2O5

Indexed keywords

CAPACITANCE; ELECTRIC PROPERTIES; ELECTRON CYCLOTRON RESONANCE; LEAKAGE CURRENTS; PERMITTIVITY; PLASMA APPLICATIONS; TANTALUM COMPOUNDS; THICK FILMS;

BREAKDOWN FIELD STRENGTH; PLASMA DEPOSITION; PLASMA IRRADIATION; PLASMA SPUTTERING; TANTALUM PENTAOXIDE;

METAL INSULATOR BOUNDARIES;

EID: 33749034443     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.7345     Document Type: Article

References (10)

1. See The International Technology Roadmap for Semiconductors, Semiconductor Industry Association; see also http://www.itrs.net/for the most recent updates (2005).
2. G. D. Wilk, R. M. Wallace and J. M. Anthony: J. Appl. Phys. 89 (2001) 5243.
3. T. Ono, C. Takahashi and S. Matsuo: Jpn. J. Appl. Phys. 23 (1984) L534.
4. T. Amazawa, T. Ono and M. Shimada: J. Vac. Sci. Technol. B 17 (1999) 2222.
5. Y. Jin, K. Saito, M. Shimada and T. Ono: J. Vac. Sci. Technol. B 23 (2005) 1480.
6. T. Ono, H. Nishimura, M. Shimada and S. Matsuo: J. Vac. Sci. Technol. A 12 (1994) 1281.
7. T. Ono, T. Amazawa, H. Nishimura and S. Matsuo: J. Vac. Sci. Technol. B 17 (1999) 2385.
8. K. Saito, Y. Jin, T. Ono and M. Shimada: Jpn. J. Appl. Phys. 43 (2004) L765.
9. E. S. Choi, J. C. Lee, J. S. Hwang, J. B. Park and S. G. Yoon: J. Electrochem. Soc. 146 (2002) 4189.
10. J. W. Lee, H. S. Song, K. M. Kim, J. M. Lee and J. S. Roh: J. Electrochem. Soc. 149 (2002) F56.