Characterization of Al2O3/GaN/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with different gate recess depths

Chinese Physics B

Volumn 20, Issue 2, 2011, Pages

  Ma, Xiao Hua ^a   Pan, Cai Yuan ^a   Yang, Li Yuan ^a   Yu, Hui You ^a   Yang, Ling ^a   Quan, Si ^a   Wang, Hao ^a   Zhang, Jin Cheng ^a   Hao, Yue ^a  

^a XIDIAN UNIVERSITY   (China)

Author keywords

AlGaN GaN gate recessed MIS HEMT; drain current injection technique; frequency dependent capacitance and conductance; knee resistance

Indexed keywords

ALGAN; ALGAN/GAN HEMTS; CHLORINE IONS; CHLORINE-BASED PLASMA; DRAIN CURRENT INJECTION TECHNIQUE; FREQUENCY-DEPENDENT CAPACITANCE AND CONDUCTANCE; GATE RECESS DEPTHS; GATE-LEAKAGE CURRENT; HIGH FREQUENCY PERFORMANCE; HIGH-K DIELECTRIC; INTERFACE PERFORMANCE; INTERFACE TRAP DENSITY; KNEE RESISTANCE; LOW POWER; METAL-INSULATOR-SEMICONDUCTORS; MIS-HEMT; N VACANCY; RECESSED GATE; THREE ORDERS OF MAGNITUDE;

CAPACITANCE; CHLORINE; DRAIN CURRENT; ELECTRON MOBILITY; FLUORINE; GALLIUM NITRIDE; LEAKAGE CURRENTS; METAL INSULATOR BOUNDARIES; MIS DEVICES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; PLASMA ETCHING; SEMICONDUCTOR INSULATOR BOUNDARIES; TRANSCONDUCTANCE; TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 79952375954     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/20/2/027304     Document Type: Article

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