Effects of gate recess depth on pulsed I-V characteristics of AlGaN/GaN HFETs

2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings

Volumn , Issue , 2003, Pages 439-440

  Conway, Adam ^a   Li, James ^a   Asbeck, Peter ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES;

ALGAN/GAN HFETS; CURRENT SLUMP; GATE RECESS DEPTHS; IV CHARACTERISTICS; KNEE VOLTAGE; OUTPUT POWER; RECESS DEPTH; SURFACE TRAP;

GALLIUM NITRIDE;

EID: 84945307415     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISDRS.2003.1272173     Document Type: Conference Paper

References (2)

1. S.C. Binari, A.A. Burk, M.R. Melloch, and C. Nguyen, "Correlation of drain current response with microwave power output in AICaN/GaN HEMTs, " Wide-Bondgap Semiconducrors for High-Power, High- Frequency and High Temp Applicotions, 1999, pp. 541-545.
2. B.M Green, K.K. Chu, E.M Smart, J.R. Shealy, and L.F. East", "The effect of surface passivation on microwave characteristics of undoped AIGaN/GaN HEMTs, " IEEE Elecr. Dev. Lett., vol.21 no.6, pp. 268-270, June 2000.