Effect of plasma dry etching on gate leakage of recessed AlGaN/GaN HEMTs

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 28, Issue 11, 2007, Pages 1777-1781

  Li, Chengzhan ^a   Pang, Lei ^a   Liu, Xinyu ^a   Huang, Jun ^a   Liu, Jian ^a   Zheng, Yingkui ^a   He, Zhijing ^a  

^a INSTITUTE OF MICROELECTRONICS   (China)

Author keywords

Gate leakage; N vacancies; Plasma dry etching; Recessed gate

Indexed keywords

ALUMINUM GALLIUM NITRIDE; ATOMIC FORCE MICROSCOPY; DRY ETCHING; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; LEAKAGE CURRENTS; PLASMA ETCHING; SURFACE ROUGHNESS; X RAY PHOTOELECTRON SPECTROSCOPY;

BREAKDOWN VOLTAGE; GATE LEAKAGE; NITROGEN VACANCIES; PLASMA DRY ETCHING; RECESSED GATE; SCHOTTKY BARRIER;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 37149033118     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (13)

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