High-electric-field-stress-induced degradation of SiN passivated AlGaN/GaN high electron mobility transistors

Chinese Physics B

Volumn 18, Issue 4, 2009, Pages 1601-1608

  Wen Ping, Gu ^a,b   Huan Tao, Duan ^a,b   Jin Yu, Ni ^a,b   Yue, Hao ^a,b   Jin Cheng, Zhang ^a,b   Qian, Feng ^a,b   Xiao Hua, Ma ^a,b  

^a XIDIAN UNIVERSITY   (China)

^b BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

Author keywords

AlGaN GaN high electron mobility transistors; Passi vation; Surface states; Traps in AlGaN

Indexed keywords

ALGAN; ALGAN/GAN HEMTS; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; BARRIER LAYERS; CAP LAYERS; DRAIN-SOURCE VOLTAGE; ELECTRIC CHARACTERISTICS; ELECTRIC FIELD STRESS; ELECTRON TRAPPING; FIELD-PLATE GATE; HIGH FIELD; HOT CARRIER STRESS; POSITIVE SHIFT; SATURATION DRAIN CURRENT; STRESS-INDUCED DEGRADATION; SURFACE STATE; SURFACE STATES; SURFACE TRAPPING; TECHNOLOGICAL SOLUTION; TRAPS IN ALGAN;

DEGRADATION; DIELECTRIC RELAXATION; DRAIN CURRENT; ELECTRIC POTENTIAL; ELECTRON MOBILITY; ELECTRON TRAPS; ELECTRONS; ENGINEERING EXHIBITIONS; GALLIUM NITRIDE; PASSIVATION; SILICON NITRIDE; TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 67650745704     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/18/4/052     Document Type: Article

References (19)

1. Nomura T, Kambayashi H, Masuda M, Ishii S, Ikeda N, Lee J and Yoshida S 2006 Proc. Int. Symp. Power Semiconductor Device and ICs p 313
2. Vetury R, Zhang N Q, Keller S and Mishra U K 2001 IEEE Trans. Electron Devices 48 560
3. Green B M, Chu K K, Chumbes E M, Smart J A, Shealy J R and Eastman L F 2000 IEEE Electron Device Lett. 21 268
4. Ha M W, Lee S C, Park J H, Her J C, Seo K S and Han M K 2006 Proc. Int. Symp. Power Semiconductor Device and ICs p 169
5. Sahoo D K, Lal R K, Kim H, Tilak V and Eastman L F 2003 IEEE Trans. Electron Devices 50 1163
6. Kim H, Thompson R M and Tilak V 2003 IEEE Electron Device Lett. 24 421
7. Binari S C, Ikossi K and Roussos J A 2001 IEEE Trans. Electron Devices 48 465
8. Vetury R, Zhang N Q and Keller S 2001 IEEE Trans. Electron Devices 48 560
9. Daumiller I, Theron D and Gaquiere C 2001 IEEE Electron Device Lett. 22 62
10. Come R, Chen Y C and Smorchkova I 2006 IEEE 44th Ann. Int. Reliability Physics Symp. p 99
11. Hasegawa H, Inagaki T and Ootomo S 2003 J. Vac. Sci. Technol. 21 1844
12. Meneghesso G, Rampazzo F and Kordo P 2006 IEEE Electron Devices 53 2932
13. Joh J and Delalamo J A 2006 Int. Electron Devices Meeting Tech. Dig. 148
14. Look D C, Reynolds D C and Hemsky J W 1997 Phys. Rev. Lett. 79 2273
15. Trew R J, Liuy and Kuangw W 2006 Int. Electron Devices Meeting Tech. Dig. 103
16. Sozza A, Dua C and Morvan E 2003 Int. Electron Devices Meeting Tech. Dig. 590
17. Lee C, Witkowski L and Tserng H Q 2004 Electron Lett. 40 1547
18. Lee C, Witkowski L and Tserng H Q 2005 Electron Lett. 41 155
19. Wei W, Lin R B, Feng Q and Hao Y 2008 Acta. Phys. Sin. 57 467 (in Chinese)