The improvement of Al2O3/AlGaN/GaN MISHEMT performance by N2 plasma pretreatment

Chinese Physics B

Volumn 18, Issue 7, 2009, Pages 3014-3017

  Qian, Feng ^a   Yuan, Tian ^a   Zhi Wei, Bi ^a   Yuan Zheng, Yue ^a   Jin Yu, Ni ^a   Jin Cheng, Zhang ^a   Yue, Hao ^a   Lin An, Yang ^a  

^a XIDIAN UNIVERSITY   (China)

Author keywords

Al2O3 AlGaN GaN MISHEMT; Atomic layer deposition; N2 plasma pretreatment

Indexed keywords

AL2O3/ALGAN/GAN MISHEMT; ALGAN; ALGAN FILMS; ALGAN/GAN; DIELECTRIC DEPOSITION; ELECTRICAL PERFORMANCE; ELECTRICAL PROPERTY; GATE LEAKAGES; INTERFACE QUALITY; METAL-INSULATOR-SEMICONDUCTORS; MIS-HEMT; N2 PLASMA PRETREATMENT; ORDERS OF MAGNITUDE; PLASMA PRE-TREATMENT; PLASMA TREATMENT;

ALUMINUM; ATOMIC LAYER DEPOSITION; ATOMS; ELECTRIC PROPERTIES; ELECTRON MOBILITY; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; METAL INSULATOR BOUNDARIES; MIS DEVICES; PLASMAS; X RAY PHOTOELECTRON SPECTROSCOPY;

PLASMA DEPOSITION;

EID: 68949167299     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/18/7/066     Document Type: Article

References (10)

1. Adivarahan V Yang J Koudymov A Simin G and Khan M A 2005 IEEE Electron Devices Lett. 26 535
2. Liu C Chor E F and Tan L S 2007 Semicond. Sci. Technol. 22 522
3. Marso M Heidelberger G Indlekofer K. M Bernat J Fox A Kordos P and Luth H 2006 IEEE Electron Devices Lett. 53 1517
4. Kordos P Gregusova D Stoklas R Cico K and Novak J 2007 Appl. Phys. Lett. 90 123513
5. Dora Y Han S Klenov D Hansen P. J No K Mishra U. K Stemmer S and Speck J S 2006 J. Vac. Sci. Technol. B 24 575
6. Kuzmik J Konstantinidis G Harasek S Hascfk S Bertagnolli E Georgakilas A and Pogany D 2004 Semicond. Sci. Technol. 19 1364
7. Khan M. A Hu X Tarakji A Simin G Yang J and Gaska R 2000 Appl. Phys. Lett. 77 1339
8. Ye P. D Wilk G. D Yang B Kwo J Gossmann H. J Frei L. M Mannaerts J. P Sergent M Hong M and Ng K K 2004 J. Electron. Mater. 33 912
9. Brewer R. T Ho M. T Zhang K. Z Goncharova L. V Starodub D. G Gustafsson T Chabal Y J and Moumen N 2004 Appl. Phys. Lett. 85 3830
10. Guo L. L Feng Q Hao Y and Yang Y 2007 Acta Phys. Sin. 56 2895 (in Chinese)