Electric-stress reliability and current collapse of different thickness SiNx passivated AlGaN/GaN high electron mobility transistors

Chinese Physics B

Volumn 19, Issue 4, 2010, Pages

  Yang, Ling ^a   Hu, Gui Zhou ^a   Hao, Yue ^a   Ma, Xiao Hua ^a   Quan, Si ^a   Yang, Li Yuan ^a   Jiang, Shou Gao ^a  

^a XIDIAN UNIVERSITY   (China)

Author keywords

Current collapse; Degradation; SiNx passivated AlGaN GaN high electron mobility transistors; Surface states

Indexed keywords

ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; CURRENT COLLAPSE; DEGRADATION MECHANISM; DIFFERENT THICKNESS; ELECTRICAL DEGRADATION; GATE DRAIN; PASSIVATION LAYER; PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITION; SURFACE STATE;

DEGRADATION; ELECTRIC CURRENT MEASUREMENT; ELECTRON MOBILITY; ELECTRONS; GALLIUM NITRIDE; PASSIVATION; PLASMA DEPOSITION; SILICON NITRIDE; TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77951613888     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/19/4/047301     Document Type: Article

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