Off-state breakdown characterization in AlGaN/GaN HEMT using drain injection technique

IEEE Transactions on Electron Devices

Volumn 57, Issue 7, 2010, Pages 1492-1496

  Wang, Maojun ^a   Chen, Kevin J ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

AlGaN GaN; high electron mobility transistors (HEMT); off state breakdown; source injection

Indexed keywords

ALGAN/GAN; ALGAN/GAN HEMTS; BREAKDOWN VOLTAGE; GATE LEAKAGES; I-V MEASUREMENTS; INJECTION CURRENTS; INJECTION LEVELS; INJECTION MEASUREMENT; INJECTION TECHNIQUES;

DRAIN CURRENT; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; IONIZATION OF LIQUIDS; PARTICLE DETECTORS;

IMPACT IONIZATION;

EID: 77954031314     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2048960     Document Type: Article

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