GaN-based FETs for microwave power amplification

IEICE Transactions on Electronics

Volumn E83-C, Issue 11, 2000, Pages 1895-1905

  Wu, Yi Feng ^a   Keller, Bernd P ^a   Keller, Stacia ^b   Xu, Jane J ^b   Thibeault, Brian J ^a   Denbaars, Steven P ^b   Mishra, Umesh K ^b  

^a Nitres ^*  (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; MODULATION DOPED FIELD EFFECT TRANSISTORS; SAPPHIRE SUBSTRATE;

FLIP CHIP DEVICES; GATES (TRANSISTOR); HEAT LOSSES; MICROWAVE INTEGRATED CIRCUITS; POWER AMPLIFIERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SILICON CARBIDE; SUBSTRATES; THERMAL CONDUCTIVITY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0034326128     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (25)