Light emission from several-atom In-N clusters in wurtzite Ga-rich InGaN alloys and InGaN/GaN strained quantum wells

Acta Materialia

Volumn 59, Issue 7, 2011, Pages 2773-2782

  Shi, Jun Jie ^a   Zhang, Shuai ^a   Yang, Mao ^a   Zhu, Shang Guo ^a   Zhang, Min ^a,b  

^a PEKING UNIVERSITY   (China)

^b INNER MONGOLIA NORMAL UNIVERSITY   (China)

Author keywords

Band gap bowing; Indium clustering; InGaN alloy; Luminescence mechanism; Strained quantum well

Indexed keywords

BAND GAPS; BOWING PARAMETERS; ELECTRON LOCALIZATIONS; FIRST-PRINCIPLES CALCULATION; FORMATION ENERGIES; HIGH CONCENTRATION; INGAN ALLOY; INGAN/GAN; LUMINESCENCE MECHANISM; QUANTUM DOT; RADIATIVE RECOMBINATION; STRAINED QUANTUM WELLS; VALENCE-BAND MAXIMUMS; WURTZITES;

ATOMS; CALCULATIONS; ELECTRONIC STRUCTURE; ENERGY GAP; GALLIUM COMPOUNDS; INDIUM; INDIUM ALLOYS; LIGHT; LUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; ZINC SULFIDE;

GALLIUM ALLOYS;

EID: 79952364666     PISSN: 13596454     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.actamat.2011.01.016     Document Type: Article

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