-
3
-
-
0032621617
-
Optical investigations of AlGaN on GaN epitaxial films
-
G. Steude, B. K. Meyer, A. Goldner, A. Hoffmann, F. Bertram, J. Christen, H. Amano, and I. Akasaki, "Optical investigations of AlGaN on GaN epitaxial films," Appl. Phys. Lett. 74, 2456, 1999.
-
(1999)
Appl. Phys. Lett.
, vol.74
, pp. 2456
-
-
Steude, G.1
Meyer, B.K.2
Goldner, A.3
Hoffmann, A.4
Bertram, F.5
Christen, J.6
Amano, H.7
Akasaki, I.8
-
4
-
-
0032606990
-
1-xN alloys
-
1-xN alloys," Appl. Phys. Lett. 74, 3344, 1999.
-
(1999)
Appl. Phys. Lett.
, vol.74
, pp. 3344
-
-
Lee, S.R.1
Wright, A.F.2
Crawford, M.H.3
Petersen, G.A.4
Han, J.5
Biefeld, R.M.6
-
5
-
-
36549091170
-
1-xN alloy
-
1-xN alloy ," J. Appl.Phys. 61, 4540, 1987.
-
(1987)
J. Appl.Phys.
, vol.61
, pp. 4540
-
-
Koide, Y.1
Itoh, H.2
Khan, M.R.H.3
Hiramatu, K.4
Sawaki, N.5
Akasaki, I.6
-
6
-
-
1842724516
-
Optical constants of epitaxial AlGaN and their temperature dependence
-
D. Brunner, H. Angerer, E. Bustarret, F. Freudenberg, R. Hopler, R. Dimitrov, O. Ambacher, and M. Stutzmann, "Optical constants of epitaxial AlGaN and their temperature dependence," J. Appl. Phys. 82, 5090, 1997.
-
(1997)
J. Appl. Phys.
, vol.82
, pp. 5090
-
-
Brunner, D.1
Angerer, H.2
Bustarret, E.3
Freudenberg, F.4
Hopler, R.5
Dimitrov, R.6
Ambacher, O.7
Stutzmann, M.8
-
8
-
-
0000630388
-
1-xN layers on (00.1) sapphire by low-pressure metalorganic chemical vapor depotition
-
1-xN layers on (00.1) sapphire by low-pressure metalorganic chemical vapor depotition," Appl. Phys. Lett. 65, 2024, 1994.
-
(1994)
Appl. Phys. Lett.
, vol.65
, pp. 2024
-
-
Wickenden, D.K.1
Bargeron, C.B.2
Bryden, W.A.3
Miragliotta, J.4
Kistenmacher, T.J.5
-
9
-
-
0031072477
-
Optical properties of strained AlGaN and GaInN on GaN
-
T. Takeuchi, H. Takeuchi, S. Sota, H. Sakai, H. Amano, and I. Akasaki, "Optical properties of strained AlGaN and GaInN on GaN," Jpn. J. Appl.Phys. 36, L177, 1997.
-
(1997)
Jpn. J. Appl.Phys.
, vol.36
-
-
Takeuchi, T.1
Takeuchi, H.2
Sota, S.3
Sakai, H.4
Amano, H.5
Akasaki, I.6
-
10
-
-
0001712269
-
1-xN alloys
-
1-xN alloys," Phys. Rev. B 58, 1928, 1998.
-
(1998)
Phys. Rev. B
, vol.58
, pp. 1928
-
-
Duda, L.-C.1
Stagarescu, C.B.2
Downes, J.3
Smith, K.E.4
Korakakis, D.5
Moustakas, T.D.6
Guo, J.7
Nordgren, J.8
-
11
-
-
0000863897
-
Band-gap and k-p parameters for GaAlN and GaInN alloys
-
S. K. Pugh, D. J. Dugdale, S. Brand, and R. A. Abram, "Band-gap and k-p parameters for GaAlN and GaInN alloys," J. Appl. Phys. 86, 3768, 1999.
-
(1999)
J. Appl. Phys.
, vol.86
, pp. 3768
-
-
Pugh, S.K.1
Dugdale, D.J.2
Brand, S.3
Abram, R.A.4
-
12
-
-
0000523507
-
Photoreflectance investigations of the bowing parameter in AlGaN alloys lattice-matched to GaN
-
T. J. Ochalski, B. Gil, P. Lefebvre, N. Grandjean, M. Leroux, J. Massies, S. Nakamura, and H. Morkoc, "Photoreflectance investigations of the bowing parameter in AlGaN alloys lattice-matched to GaN," Appl. Phys. Lett. 74, 3353, 1999.
-
(1999)
Appl. Phys. Lett.
, vol.74
, pp. 3353
-
-
Ochalski, T.J.1
Gil, B.2
Lefebvre, P.3
Grandjean, N.4
Leroux, M.5
Massies, J.6
Nakamura, S.7
Morkoc, H.8
-
13
-
-
0001402096
-
1-xN alloys grown by metalorganic chemical vapor deposition
-
1-xN alloys grown by metalorganic chemical vapor deposition," J. Appl. Phys. 84, 4452, 1998.
-
(1998)
J. Appl. Phys.
, vol.84
, pp. 4452
-
-
Shan, W.1
Walukiewicz, W.2
Haller, E.E.3
Little, B.D.4
Song, J.J.5
McCluskey, M.D.6
Johnson, N.M.7
Feng, Z.C.8
Schurman, M.9
Stall, R.A.10
-
14
-
-
0001401146
-
1-xN alloys
-
1-xN alloys," Appl. Phys. Lett. 72, 2725, 1998.
-
(1998)
Appl. Phys. Lett.
, vol.72
, pp. 2725
-
-
McCluskey, M.D.1
Van De Walle, C.G.2
Master, C.P.3
Romano, L.T.4
Johnson, N.M.5
-
17
-
-
0000977147
-
Indium incorporation above 800 °C during metalorganic vapor phase epitaxy of InGaN
-
H. P. D. Schenk, P. de Mierry, M. Laugt, F. Omnès, M. Leroux, B. Beaumont, and P. Gibart, "Indium incorporation above 800 °C during metalorganic vapor phase epitaxy of InGaN," Appl. Phys. Lett. 75, 2587, 1999.
-
(1999)
Appl. Phys. Lett.
, vol.75
, pp. 2587
-
-
Schenk, H.P.D.1
De Mierry, P.2
Laugt, M.3
Omnès, F.4
Leroux, M.5
Beaumont, B.6
Gibart, P.7
-
18
-
-
0035831850
-
1-xN layers
-
1-xN layers," Appl. Phys. Lett. 78, 2137, 2001.
-
(2001)
Appl. Phys. Lett.
, vol.78
, pp. 2137
-
-
Pereira, S.1
Correia, M.R.2
Monteiro, T.3
Pereira, E.4
Alves, E.5
Sequeira, A.D.6
Franco, N.7
-
19
-
-
79956041003
-
xN alloys
-
xN alloys," Appl. Phys. Lett. 80, 4741, 2002.
-
(2002)
Appl. Phys. Lett.
, vol.80
, pp. 4741
-
-
Wu, J.1
Walukiewicz, W.2
Yu, K.M.3
Ager III, J.W.4
Haller, E.E.5
Lu, H.6
Schaff, W.J.7
-
20
-
-
0001324230
-
1-xN
-
1-xN," J. Appl. Phys. 88, 6476, 2000.
-
(2000)
J. Appl. Phys.
, vol.88
, pp. 6476
-
-
Goano, M.1
Bellotti, E.2
Ghillino, E.3
Garetto, C.4
Ghione, G.5
Brennan, K.F.6
-
21
-
-
0037309319
-
1-xN
-
1-xN ," Phys. Status Solidi a 195, 628, 2003.
-
(2003)
Phys. Status Solidi a
, vol.195
, pp. 628
-
-
Bechstedt, F.1
Furthmüller, J.2
Ferhat, M.3
Teles, L.K.4
Scolfaro, L.M.R.5
Leite, J.R.6
Davydov, V.Yu.7
Ambacher, O.8
Goldhahn, R.9
-
22
-
-
0031150303
-
Theory of AlN, GaN, InN and their alloys
-
M. Van Schilfgaarde, A. Sher, and A.-B. Chen, "Theory of AlN, GaN, InN and their alloys," J. Cryst. Growth 178, 8, 1997.
-
(1997)
J. Cryst. Growth
, vol.178
, pp. 8
-
-
Van Schilfgaarde, M.1
Sher, A.2
Chen, A.-B.3
-
24
-
-
0042113153
-
Self-consistent equations including exchange and correlation effects
-
W. Kohn and L. J. Sham, "Self-consistent equations including exchange and correlation effects," Phys. Rev. 140, A1133, 1965.
-
(1965)
Phys. Rev.
, vol.140
-
-
Kohn, W.1
Sham, L.J.2
-
25
-
-
0000079003
-
Extreme softening of Vanderbilt pseudopotentials: General rules and case studies of first-row and d-electron elements
-
J. Furthmüller, P. Kackell, and F. Bechstedt, "Extreme softening of Vanderbilt pseudopotentials: General rules and case studies of first-row and d-electron elements," Phys. Rev. B 61, 4576, 2000.
-
(2000)
Phys. Rev. B
, vol.61
, pp. 4576
-
-
Furthmüller, J.1
Kackell, P.2
Bechstedt, F.3
-
26
-
-
0028763270
-
Norm-conserving and ultrasoft pseudopotentials for first-row and transition-elements
-
G. Kresse and J. Hafner, "Norm-conserving and ultrasoft pseudopotentials for first-row and transition-elements," J. Phys.: Condens. Matter 6, 8245, 1994.
-
(1994)
J. Phys.: Condens. Matter
, vol.6
, pp. 8245
-
-
Kresse, G.1
Hafner, J.2
-
27
-
-
0342298511
-
Stress theorem in the determination of static equilibrium by the density functional method
-
P. G. Dacostat, O. H. Nielsentf, and K. Kunc, "Stress theorem in the determination of static equilibrium by the density functional method," J. Phys. C: Solid State Phys. 19, 3163, 1986.
-
(1986)
J. Phys. C: Solid State Phys.
, vol.19
, pp. 3163
-
-
Dacostat, P.G.1
Nielsentf, O.H.2
Kunc, K.3
-
28
-
-
2442537377
-
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
-
G. Kresse and J. Furthmüller, "Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set," Phys. Rev. B 54, 11169, 1996.
-
(1996)
Phys. Rev. B
, vol.54
, pp. 11169
-
-
Kresse, G.1
Furthmüller, J.2
-
29
-
-
11944256577
-
Iterative minimization techniques for ab initio total-energy calculations: Molecular dynamics and conjugate gradients
-
M. C. Payne, M. P. Teter, D. C. Allen, T. A. Arias, and J. D. Joannopolous, "Iterative minimization techniques for ab initio total-energy calculations: molecular dynamics and conjugate gradients," Rev. Mod. Phys. 64, 1045, 1992.
-
(1992)
Rev. Mod. Phys.
, vol.64
, pp. 1045
-
-
Payne, M.C.1
Teter, M.P.2
Allen, D.C.3
Arias, T.A.4
Joannopolous, J.D.5
-
30
-
-
1842816907
-
Special points for Brillouin-zone integrations
-
H. J. Monkhorst and J. D. Pack, "Special points for Brillouin-zone integrations," Phys. Rev. B 13, 5188, 1976.
-
(1976)
Phys. Rev. B
, vol.13
, pp. 5188
-
-
Monkhorst, H.J.1
Pack, J.D.2
-
31
-
-
33744716978
-
Explicit treatment of the gallium 3d electrons in GaN using the plane-wave pseudopotential method
-
A. F. Wright and J. S. Nelson, "Explicit treatment of the gallium 3d electrons in GaN using the plane-wave pseudopotential method," Phys. Rev. B 50, 2159, 1994.
-
(1994)
Phys. Rev. B
, vol.50
, pp. 2159
-
-
Wright, A.F.1
Nelson, J.S.2
-
32
-
-
5644231961
-
Atomic geometry and electronic structure of native defects in GaN
-
J. Neugebauer and C. G. Van de Walle, "Atomic geometry and electronic structure of native defects in GaN," Phys. Rev. B 50, 8067, 1994.
-
(1994)
Phys. Rev. B
, vol.50
, pp. 8067
-
-
Neugebauer, J.1
Van De Walle, C.G.2
-
33
-
-
33744568942
-
Consistent structural properties for AlN, GaN, and InN
-
A. F. Wright and J. S. Nelson, "Consistent structural properties for AlN, GaN, and InN," Phys. Rev. B 51, 7866, 1995.
-
(1995)
Phys. Rev. B
, vol.51
, pp. 7866
-
-
Wright, A.F.1
Nelson, J.S.2
-
34
-
-
16344391446
-
High-pressure properties of wurtzite- And rocksalt-type aluminum nitride
-
P. E. Van Camp, V. E. Van Doren, and J. T. Devreese, "High-pressure properties of wurtzite- and rocksalt-type aluminum nitride," Phys. Rev. B 44, 9056, 1991.
-
(1991)
Phys. Rev. B
, vol.44
, pp. 9056
-
-
Van Camp, P.E.1
Van Doren, V.E.2
Devreese, J.T.3
-
35
-
-
0026771684
-
High pressure structural phase transformation in gallium nitride
-
P. E. Van Camp, V. E. Van Doren, and J. T. Devreese, "High pressure structural phase transformation in gallium nitride," Solid State Commun. 81, 23, 1992.
-
(1992)
Solid State Commun.
, vol.81
, pp. 23
-
-
Van Camp, P.E.1
Van Doren, V.E.2
Devreese, J.T.3
-
36
-
-
0000481955
-
Ab initio phonon dispersions of wurtzite AlN, GaN, and InN
-
C. Bungaro, K. Rapcewicz, and J. Bernholc, "Ab initio phonon dispersions of wurtzite AlN, GaN, and InN," Phys. Rev. B 61, 6720, 2000.
-
(2000)
Phys. Rev. B
, vol.61
, pp. 6720
-
-
Bungaro, C.1
Rapcewicz, K.2
Bernholc, J.3
-
37
-
-
33751130770
-
Calculated structural phase transitions of aluminum nitride under pressure
-
N. E. Christensen and I. Gorczyca, "Calculated structural phase transitions of aluminum nitride under pressure," Phys. Rev. B 47, 4307, 1993.
-
(1993)
Phys. Rev. B
, vol.47
, pp. 4307
-
-
Christensen, N.E.1
Gorczyca, I.2
-
38
-
-
0000334034
-
First-principles calculation of the structural, electronic, and vibrational properties of gallium nitride and aluminum nitride
-
K. Miwa and A. Fukumoto, "First-principles calculation of the structural, electronic, and vibrational properties of gallium nitride and aluminum nitride," Phys. Rev. B 48, 7897, 1993.
-
(1993)
Phys. Rev. B
, vol.48
, pp. 7897
-
-
Miwa, K.1
Fukumoto, A.2
-
39
-
-
0017536236
-
Crystal structure refinement of A1N and GaN
-
H. Schulz and K.H. Thiemann, "Crystal structure refinement of A1N and GaN," Solid State Commun. 23, 815, 1977.
-
(1977)
Solid State Commun.
, vol.23
, pp. 815
-
-
Schulz, H.1
Thiemann, K.H.2
-
40
-
-
0036925291
-
Band gap of hexagonal InN and InGaN alloys
-
V. Yu. Davydov, A. A. Klochikhin, V. V. Emtsev, D. A. Kurdyukov, S. V. Ivanov, V. A. Vekshin, F. Bechstedt, J. Furthmüller, J. Aderhold, J. Graul, A. V. Mudryi, H. Harima, A. Hashimoto, A. Yamamoto, and E. E. Haller, "Band gap of hexagonal InN and InGaN alloys," Phys. Status Solidi b 234, 787, 2002.
-
(2002)
Phys. Status Solidi B
, vol.234
, pp. 787
-
-
Davydov, V.Yu.1
Klochikhin, A.A.2
Emtsev, V.V.3
Kurdyukov, D.A.4
Ivanov, S.V.5
Vekshin, V.A.6
Bechstedt, F.7
Furthmüller, J.8
Aderhold, J.9
Graul, J.10
Mudryi, A.V.11
Harima, H.12
Hashimoto, A.13
Yamamoto, A.14
Haller, E.E.15
-
41
-
-
0000630807
-
Quasiparticle band structure of AlN and GaN
-
A. Rubio, J. L. Corkill, M. L. Cohen, E. L. Shirley, and S. G. Louie, "Quasiparticle band structure of AlN and GaN," Phys. Rev. B 48, 11810, 1993.
-
(1993)
Phys. Rev. B
, vol.48
, pp. 11810
-
-
Rubio, A.1
Corkill, J.L.2
Cohen, M.L.3
Shirley, E.L.4
Louie, S.G.5
-
42
-
-
0000277583
-
Valence-band photoemission from the GaN(0001) surface
-
T. Strasser, C. Solterbeck, F. Starrost, and W. Schattke, "Valence-band photoemission from the GaN(0001) surface," Phys. Rev. B 60, 11577, 1999.
-
(1999)
Phys. Rev. B
, vol.60
, pp. 11577
-
-
Strasser, T.1
Solterbeck, C.2
Starrost, F.3
Schattke, W.4
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