Influence of V/III molar ratio on the formation of in vacancies in InN grown by metal-organic vapor-phase epitaxy

Applied Physics Letters

Volumn 89, Issue 1, 2006, Pages

  Pelli, A ^a   Saarinen, K ^a   Tuomisto, F ^a   Ruffenach, S ^b   Briot, O ^b  

^a AALTO UNIVERSITY   (Finland)

^b UNIVERSITÉ MONTPELLIER 2   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION (PROCESS); DECOMPOSITION; SEMICONDUCTOR GROWTH; SUBSTRATES; THERMAL EFFECTS; VAPOR PHASE EPITAXY;

GROWTH TEMPERATURE; MOLAR RATIOS; VACANCY CONCENTRATION;

INDIUM COMPOUNDS;

EID: 33745781471     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2219335     Document Type: Article

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