Enhancement of phase separation in the InGaN layer for self-assembled In-rich quantum dots

Applied Physics Letters

Volumn 87, Issue 6, 2005, Pages

  Park, Il Kyu ^a   Kwon, Min Ki ^a   Baek, Sung Ho ^a   Ok, Young Woo ^a   Seong, Tae Yeon ^a   Park, Seong Ju ^a   Kim, Yoon Seok ^b   Moon, Yong Tae ^c   Kim, Dong Joon ^d  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Korea Photonics Technology Institute (KOPTI)   (South Korea)

^c Virginia Commonwealth University   (United States)

^d Samsung Electro Mechanics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CRITICAL THICKNESSES; IN-RICH QD;

GALLIUM NITRIDE; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY;

PHASE SEPARATION;

EID: 23944456410     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2008365     Document Type: Article

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