-
5
-
-
79956030105
-
Unusual properties of the fundamental band gap of InN
-
DOI 10.1063/1.1482786
-
J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager III, E. E. Haller, H. Lu, W. J. Shaff, Y. Saito, and Y. Nanishi, Appl. Phys. Lett. 0003-6951 80, 3967 (2002). 10.1063/1.1482786 (Pubitemid 34638109)
-
(2002)
Applied Physics Letters
, vol.80
, Issue.21
, pp. 3967
-
-
Wu, J.1
Walukiewicz, W.2
Yu, K.M.3
Ager III, J.W.4
Haller, E.E.5
Lu, H.6
Schaff, W.J.7
Saito, Y.8
Nanishi, Y.9
-
6
-
-
77949751272
-
-
MRS Symposia Proceedings No. 395 (Materials Research Society, Pittsburgh),.
-
T. Matsuoka, Galium Nitride and Related Materials, MRS Symposia Proceedings No. 395 (Materials Research Society, Pittsburgh, 1996), p. 39.
-
(1996)
Galium Nitride and Related Materials
, pp. 39
-
-
Matsuoka, T.1
-
7
-
-
77949735608
-
-
MRS Symposia Proceedings No. 395 (Materials Research Society, Pittsburgh),.
-
J. F. Shetzina, Galium Nitride and Related Materials, MRS Symposia Proceedings No. 395 (Materials Research Society, Pittsburgh, 1996), p. 123.
-
(1996)
Galium Nitride and Related Materials
, pp. 123
-
-
Shetzina, J.F.1
-
8
-
-
0029726751
-
-
MRS Symposia Proceedings No. 395 (Materials Research Society, Pittsburgh),.
-
F. G. McIntosh, E. Piner, K. Boutros, J. C. Roberts, Y. He, M. Moussa, N. El-Masry, and S. M. Bedair, Galium Nitride and Related Materials, MRS Symposia Proceedings No. 395 (Materials Research Society, Pittsburgh, 1996), p. 219.
-
(1996)
Galium Nitride and Related Materials
, pp. 219
-
-
McIntosh, F.G.1
Piner, E.2
Boutros, K.3
Roberts, J.C.4
He, Y.5
Moussa, M.6
El-Masry, N.7
Bedair, S.M.8
-
9
-
-
77949771657
-
-
in, edited by A. A. Baladin and K. L. Wang (ASP, Stevenson Ranch, CA), Vol.,.
-
P. Perlin, M. Leszczynski, and T. Suski, in Handboook of Semiconductor Nanostructures and Nanodevices, edited by, A. A. Baladin, and, K. L. Wang, (ASP, Stevenson Ranch, CA, 2005), Vol. 4, p. 17.
-
(2005)
Handboook of Semiconductor Nanostructures and Nanodevices
, vol.4
, pp. 17
-
-
Perlin, P.1
Leszczynski, M.2
Suski, T.3
-
10
-
-
70249143188
-
-
0163-1829,. 10.1103/PhysRevB.80.075202
-
I. Gorczyca, S. P. Lepkowski, T. Suski, N. E. Christensen, and A. Svane, Phys. Rev. B 0163-1829 80, 075202 (2009). 10.1103/PhysRevB.80.075202
-
(2009)
Phys. Rev. B
, vol.80
, pp. 075202
-
-
Gorczyca, I.1
Lepkowski, S.P.2
Suski, T.3
Christensen, N.E.4
Svane, A.5
-
11
-
-
0030190741
-
Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set
-
DOI 10.1016/0927-0256(96)00008-0, PII S0927025696000080
-
G. Kresse and J. Furthmüller, Comput. Mater. Sci. 0927-0256 6, 15 (1996). 10.1016/0927-0256(96)00008-0 (Pubitemid 126412269)
-
(1996)
Computational Materials Science
, vol.6
, Issue.1
, pp. 15-50
-
-
Kresse, G.1
Furthmuller, J.2
-
12
-
-
0000201180
-
-
0163-1829, () 10.1103/PhysRevB.38.1537;, Phys. Rev. B 0163-1829 40, 2009 (1989). 10.1103/PhysRevB.40.2009
-
M. Methfessel, Phys. Rev. B 0163-1829 38, 1537 (1988) 10.1103/PhysRevB.38.1537; M. Methfessel, C. O. Rodriguez, and O. K. Andersen, Phys. Rev. B 0163-1829 40, 2009 (1989). 10.1103/PhysRevB.40.2009
-
(1988)
Phys. Rev. B
, vol.38
, pp. 1537
-
-
Methfessel, M.1
Methfessel, M.2
Rodriguez, C.O.3
Andersen, O.K.4
-
13
-
-
0001178057
-
-
0163-1829,. 10.1103/PhysRevB.30.5753
-
N. E. Christensen, Phys. Rev. B 0163-1829 30, 5753 (1984). 10.1103/PhysRevB.30.5753
-
(1984)
Phys. Rev. B
, vol.30
, pp. 5753
-
-
Christensen, N.E.1
-
14
-
-
0001631441
-
-
0021-8979,. 10.1063/1.370696
-
W. Shan, J. W. Ager III, K. M. Yu, W. Walukiewicz, E. E. Haller, M. C. Martin, W. R. McKinney, and W. Yan, J. Appl. Phys. 0021-8979 85, 8505 (1999). 10.1063/1.370696
-
(1999)
J. Appl. Phys.
, vol.85
, pp. 8505
-
-
Shan, W.1
Iii, W.A.J.2
Yu, K.M.3
Walukiewicz, W.4
Haller, E.E.5
Martin, M.C.6
McKinney, W.R.7
Yan, W.8
-
15
-
-
0036508146
-
xN epitaxial films grown on AlN buffer layers
-
DOI 10.1016/S0925-9635(01)00669-0, PII S0925963501006690, Proceedings of Diamond 2001, the 12th Conference on Diamond, Diamond-like materials, Carbon Nanotubes, Nitrides and Silicon Carbide
-
N. Teofilov, K. Thonke, R. Sauer, L. Kirste, D. G. Ebling, and K. W. Benz, Diamond Relat. Mater. 0925-9635 11, 892 (2002). 10.1016/S0925-9635(01) 00669-0 (Pubitemid 34696370)
-
(2002)
Diamond and Related Materials
, vol.11
, Issue.3-6
, pp. 892-895
-
-
Teofilov, N.1
Thonke, K.2
Sauer, R.3
Kirste, L.4
Ebling, D.G.5
Benz, K.W.6
-
16
-
-
27844481537
-
Dielectric function and critical points of the band structure for AlGaN alloys
-
DOI 10.1002/pssb.200541265
-
C. Buchheim, R. Goldhahn, M. Rakel, C. Cobet, N. Esser, U. Rossow, D. Fuhrmann, and A. Hangleiter, Phys. Status Solidi B 0370-1972 242, 2610 (2005). 10.1002/pssb.200541265 (Pubitemid 41650658)
-
(2005)
Physica Status Solidi (B) Basic Research
, vol.242
, Issue.13
, pp. 2610-2616
-
-
Buchheim, C.1
Goldhahn, R.2
Rakel, M.3
Cobet, C.4
Esser, N.5
Rossow, U.6
Fuhrmann, D.7
Hangleiter, A.8
-
18
-
-
39349118034
-
-
0021-8979,. 10.1063/1.2837072
-
G. Franssen, I. Gorczyca, T. Suski, A. Kamińska, J. Pereiro, E. Muoz, E. Iliopoulos, A. Georgakilas, S. B. Che, Y. Ishitani, A. Yoshikawa, N. E. Christensen, and A. Svane, J. Appl. Phys. 0021-8979 103, 033514 (2008). 10.1063/1.2837072
-
(2008)
J. Appl. Phys.
, vol.103
, pp. 033514
-
-
Franssen, G.1
Gorczyca, I.2
Suski, T.3
Kamińska, A.4
Pereiro, J.5
Muoz, E.6
Iliopoulos, E.7
Georgakilas, A.8
Che, S.B.9
Ishitani, Y.10
Yoshikawa, A.11
Christensen, N.E.12
Svane, A.13
-
19
-
-
65949083779
-
-
0022-0248,. 10.1016/j.jcrysgro.2009.01.009
-
M. Moret, B. Gil, S. Ruffenach, O. Briot, Ch. Giesen, M. Heuken, S. Rushworth, T. Leese, and M. Succi, J. Cryst. Growth 0022-0248 311, 2795 (2009). 10.1016/j.jcrysgro.2009.01.009
-
(2009)
J. Cryst. Growth
, vol.311
, pp. 2795
-
-
Moret, M.1
Gil, B.2
Ruffenach, S.3
Briot, O.4
Giesen, Ch.5
Heuken, M.6
Rushworth, S.7
Leese, T.8
Succi, M.9
-
20
-
-
79956041003
-
-
0003-6951,. 10.1063/1.1489481
-
J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager III, E. E. Haller, H. Lu, and W. J. Schaff, Appl. Phys. Lett. 0003-6951 80, 4741 (2002). 10.1063/1.1489481
-
(2002)
Appl. Phys. Lett.
, vol.80
, pp. 4741
-
-
Wu, J.1
Walukiewicz, W.2
Yu, K.M.3
Iii, W.A.J.4
Haller, E.E.5
Lu, H.6
Schaff, W.J.7
-
21
-
-
42149112212
-
-
0021-8979,. 10.1063/1.2898533
-
K. Wang, R. W. Martin, D. Amabile, P. R. Edwards, S. Hernandez, E. Nogales, K. P. O'Donnel, K. Lorenz, E. Alves, V. Matias, A. Vantomme, D. Wolverson, and I. M. Watson, J. Appl. Phys. 0021-8979 103, 073510 (2008). 10.1063/1.2898533
-
(2008)
J. Appl. Phys.
, vol.103
, pp. 073510
-
-
Wang, K.1
Martin, R.W.2
Amabile, D.3
Edwards, P.R.4
Hernandez, S.5
Nogales, E.6
O'Donnel, K.P.7
Lorenz, K.8
Alves, E.9
Matias, V.10
Vantomme, A.11
Wolverson, D.12
Watson, I.M.13
-
22
-
-
0000013330
-
-
0003-6951,. 10.1063/1.125615
-
S. Yamaguchi, M. Kariya, S. Nita, T. Takeuchi, C. Wetzel, H. Amano, and I. Akasaki, Appl. Phys. Lett. 0003-6951 76, 876 (2000). 10.1063/1.125615
-
(2000)
Appl. Phys. Lett.
, vol.76
, pp. 876
-
-
Yamaguchi, S.1
Kariya, M.2
Nita, S.3
Takeuchi, T.4
Wetzel, C.5
Amano, H.6
Akasaki, I.7
-
23
-
-
33745293948
-
Growth and characterization of AlInN ternary alloys in whole composition range and fabrication of InN/AlInN multiple quantum wells by RF molecular beam epitaxy
-
DOI 10.1143/JJAP.45.L539
-
W. Terashima, S. B. Che, Y. Ishitani, and A. Yoshikawa, Jpn. J. Appl. Phys., Part 2 0021-4922 45, L539 (2006). 10.1143/JJAP.45.L539 (Pubitemid 43938111)
-
(2006)
Japanese Journal of Applied Physics, Part 2: Letters
, vol.45
, Issue.20-23
-
-
Terashima, W.1
Che, S.-B.2
Ishitani, Y.3
Yoshikawa, A.4
-
24
-
-
4043075504
-
-
0953-8984,. 10.1088/0953-8984/16/31/015
-
T. D. Veal, I. Mahboob, L. F. Piper, T. Ashley, M. Hopkinson, and C. F. McConville, J. Phys.: Condens. Matter 0953-8984 16, S3201 (2004). 10.1088/0953-8984/16/31/015
-
(2004)
J. Phys.: Condens. Matter
, vol.16
, pp. 3201
-
-
Veal, T.D.1
Mahboob, I.2
Piper, L.F.3
Ashley, T.4
Hopkinson, M.5
McConville, C.F.6
-
26
-
-
55149093225
-
-
0003-6951,. 10.1063/1.3009199
-
Y. -T. Lin, T. -C. Ma, T. -Y. Chen, and H. -H. Lin, Appl. Phys. Lett. 0003-6951 93, 171914 (2008). 10.1063/1.3009199
-
(2008)
Appl. Phys. Lett.
, vol.93
, pp. 171914
-
-
Lin, Y.-T.1
Ma, T.-C.2
Chen, T.-Y.3
Lin, H.-H.4
-
27
-
-
64249091411
-
-
0268-1242,. 10.1088/0268-1242/24/3/033001
-
E. P. O'Reilly, A. Lindsay, P. J. Klar, A. Polimeni, and M. Capizzi, Semicond. Sci. Technol. 0268-1242 24, 033001 (2009). 10.1088/0268-1242/24/3/ 033001
-
(2009)
Semicond. Sci. Technol.
, vol.24
, pp. 033001
-
-
O'Reilly, E.P.1
Lindsay, A.2
Klar, P.J.3
Polimeni, A.4
Capizzi, M.5
|