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Volumn 3, Issue 4, 2009, Pages 124-126
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Room-temperature epitaxial growth of high-quality m-plane InGaN films on ZnO substrates
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Author keywords
[No Author keywords available]
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Indexed keywords
ATOMICALLY FLAT SURFACE;
HIGH QUALITY;
LOW DEFECT DENSITIES;
M-PLANE;
RECIPROCAL SPACE;
ROOM TEMPERATURE;
X RAY ROCKING CURVE;
X-RAY DIFFRACTION MEASUREMENTS;
ZNO;
ZNO SUBSTRATE;
COMMUNICATION CHANNELS (INFORMATION THEORY);
DEFECT DENSITY;
EPITAXIAL FILMS;
EPITAXIAL GROWTH;
GALLIUM;
PHASE SEPARATION;
PULSED LASER DEPOSITION;
SEMICONDUCTING ZINC COMPOUNDS;
SOIL CONSERVATION;
SUBSTRATES;
TWO DIMENSIONAL;
ZINC OXIDE;
FILM GROWTH;
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EID: 71149113344
PISSN: 18626254
EISSN: 18626270
Source Type: Journal
DOI: 10.1002/pssr.200903072 Document Type: Article |
Times cited : (14)
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References (18)
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