Control performance of a single-chip white light emitting diode by adjusting strain in InGaN underlying layer

Applied Physics Letters

Volumn 94, Issue 11, 2009, Pages

  Wang, X H ^a   Guo, L W ^a   Jia, H Q ^a   Xing, Z G ^a   Wang, Y ^a   Pei, X J ^a   Zhou, J M ^a   Chen, H ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

INDIUM; LIGHT EMISSION; LIGHT EMITTING DIODES; PHASE SEPARATION; PHYSICAL OPTICS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WIRES; SIZE SEPARATION; TRANSMISSION ELECTRON MICROSCOPY;

ACTIVE LAYERS; CONTROL PERFORMANCE; DIFFERENT SIZES; INGAN QUANTUM WELLS; INGAN/GAN; LIGHT EMITTING DIODE LEDS; MULTIPLE QUANTUM WELLS; QUANTUM DOTS; RELAXATION DEGREES; SINGLE CHIPS; UNDERLYING LAYERS; WHITE LIGHT EMITTING DIODES; WHITE LIGHTS; X-RAY RECIPROCAL SPACE MAPPINGS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 63049098420     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3103559     Document Type: Article

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