MOVPE growth and Mg doping of InxGa1-xN (x∼0.4) for solar cell

Solar Energy Materials and Solar Cells

Volumn 93, Issue 6-7, 2009, Pages 1013-1015

  Horie, M ^a   Sugita, K ^a   Hashimoto, A ^a   Yamamoto, A ^a  

^a UNIVERSITY OF FUKUI   (Japan)

Author keywords

CP2Mg; InGaN; Mg doping; MOVPE

Indexed keywords

COMPENSATION EFFECTS; COMPOSITION CHANGES; CP2MG; INGAN; MG DOPING; MOLAR RATIOS; MOVPE; MOVPE GROWTHS; P-TYPE CONDUCTIONS;

DOPING (ADDITIVES); GALLIUM; GRAIN BOUNDARIES; GROWTH TEMPERATURE; INDIUM; METALLORGANIC VAPOR PHASE EPITAXY; PHASE MODULATION; PHASE SEPARATION; PHOTOVOLTAIC CELLS; SOLAR CELLS; THERMOELECTRIC EQUIPMENT;

CELL GROWTH;

EID: 67349222201     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2008.11.031     Document Type: Article

References (5)

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5. W. Walukiewicz, J.W. Ager, K. Man Yu, in: Book of Abstracts for 17th International Photovoltaic science and Engineering Conference, 6O-B9-02, Fukuoka, Japan, 3-7 December 2007, pp. 470.