Localization of excitation in InGaN epilayers

Philosophical Magazine

Volumn 87, Issue 13, 2007, Pages 1999-2017

  Kachkanov, V ^a   O'Donnell, K P ^a   Pereira, S ^b   Martin, R W ^a  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^b UNIVERSITY OF AVEIRO   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC EXCITATION; EPILAYERS; LIGHT EMITTING DIODES; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS;

ENERGY SCALABILITY; EXTENDED X-RAY ABSORPTION FINE STRUCTURE (EXAFS); SPECTRAL ENERGY SCALING;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 34248524481     PISSN: 14786435     EISSN: 14786443     Source Type: Journal    
DOI: 10.1080/14786430701342164     Document Type: Article

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