Resonant excitation photoluminescence studies of InGaN/GaN single quantum well structures

Applied Physics Letters

Volumn 89, Issue 21, 2006, Pages

  Graham, D M ^a   Dawson, P ^a   Godfrey, M J ^a   Kappers, M J ^b   Humphreys, C J ^b  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC EMISSIONS; INDIUM COMPOUNDS; LOW TEMPERATURE EFFECTS; OPTICAL PROPERTIES; PHONONS; PHOTOLUMINESCENCE;

ACOUSTIC-PHONON ASSISTED ABSORPTION PROCESS; PLANE LOCALIZATION; RESONANT EXCITATION PHOTOLUMINESCENCE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33845465417     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2392820     Document Type: Article

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