Velocity overshoot effects and scaling issues in III-V nitrides

IEEE Transactions on Electron Devices

Volumn 52, Issue 3, 2005, Pages 311-316

  Singh, Madhusudan ^a   Wu, Yuh Renn ^a   Singh, Jasprit ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

Field reversal; Index Terms III V nitrides; Nonequilibrium phonons; Self heating; Transport mechanism; Velocity overshoot

Indexed keywords

COMPUTER SIMULATION; FINITE ELEMENT METHOD; GALLIUM NITRIDE; GATES (TRANSISTOR); HETEROJUNCTIONS; MONTE CARLO METHODS; NITRIDES; PHONONS; POISSON EQUATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES;

FIELD REVERSAL; III-V NITRIDES; NONEQUILIBRIUM PHONONS; SELF HEATING; TRANSPORT MECHANISM; VELOCITY OVERSHOOT;

FIELD EFFECT TRANSISTORS;

EID: 15044365864     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.843966     Document Type: Article

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