Direct immobilization and hybridization of DNA on group III nitride semiconductors

Applied Surface Science

Volumn 255, Issue 11, 2009, Pages 5905-5909

  Xu, Xiaobin ^a   Jindal, Vibhu ^a   Shahedipour Sandvik, Fatemeh ^a   Bergkvist, Magnus ^a   Cady, Nathaniel C ^a  

^a STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

DNA; Group III V semiconductors; HEMT; Immobilization; Sensor

Indexed keywords

ALUMINUM ALLOYS; ALUMINUM GALLIUM NITRIDE; BIOACTIVITY; BIOSENSORS; CROSSLINKING; DNA; GALLIUM ALLOYS; III-V SEMICONDUCTORS; IONIC STRENGTH; NITRIDES; NUCLEIC ACIDS; PROBES; RADIOACTIVE WASTE VITRIFICATION; SEMICONDUCTOR ALLOYS; SENSORS; WIDE BAND GAP SEMICONDUCTORS;

CROSS LINKING AGENTS; FUNCTIONALIZATIONS; HIGH ELECTRON MOBILITY TRANSISTOR (HEMT); MINIMUM DETECTION LIMITS; PRINTING TECHNIQUES; PROBE HYBRIDIZATION; SINGLE-STRANDED DNA; STRENGTH CONDITION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 60949098562     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.01.029     Document Type: Article

References (30)

1. Pearton S.J., Kang B.S., Suku K., Ren F., Gila B.P., Abernathy C.R., Jenshan L., and Chu S.N.G. GaN-based diodes and transistors for chemical, gas, biological and pressure sensing. Journal of Physics: Condensed Matter 16 (2004) R961-R994
2. Eickhoff M., Ambacher O., Steinhoff G., Schalwig J., Neuberger R., Palacios T., Monroy E., Calle F., Muller G., and Stutzmann M. Novel sensor applications of group-III nitrides. Materials Research Society Symposium Proceedings, vol. 693 (2002)
3. Kang B.S., Wang H.T., Ren F., and Pearton S.J. Electrical detection of biomaterials using AlGaN/GaN high electron mobility transistors. Journal of Applied Physics 104 (2008) 031101-031111
4. Matsuo K., Negoro N., Kotani J., Hashizume T., and Hasegawa H. Pt Schottky diode gas sensors formed on GaN and AlGaN/GaN heterostructure. Applied Surface Science 244 (2005) 273-276
5. Ali M., Cimalla V., Lebedev V., Romanus H., Tilak V., Merfeld D., Sandvik P., and Ambacher O. Pt/GaN Schottky diodes for hydrogen gas sensors. Sensors and Actuators B: Chemical 113 (2006) 797-804
6. Luther B.P., Wolter S.D., and Mohney S.E. High temperature Pt Schottky diode gas sensors on n-type GaN. Sensors and Actuators B: Chemical 56 (1999) 164-168
7. Kang B.S., Suku K., Ren F., Gila B.P., Abernathy C.R., and Pearton S.J. AlGaN/GaN-based diodes and gateless HEMTs for gas and chemical sensing. Sensors Journal, IEEE 5 (2005) 677-680
8. Hashizume T., Ootomo S., Oyama S., Konishi M., and Hasegawa H. Chemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostructures. Papers from the 28th Conference on the Physics and Chemistry of Semiconductor Interfaces. Lake Buena Vista, Florida (2001) 1675-1681
9. Bruno Bujoli S.M., Lane G., Nonglaton M., Pipelier J., Leger D.R., and Talham C. Tellier metal phosphonates applied to biotechnologies: a novel approach to oligonucleotide microarrays. Cheminform 37 (2006) 1522-2667
10. Kang B.S., Pearton S.J., Chen J.J., Ren F., Johnson J.W., Therrien R.J., Rajagopal P., Roberts J.C., Piner E.L., and Linthicum K.J. Electrical detection of deoxyribonucleic acid hybridization with AlGaN/GaN high electron mobility transistors. Materials Research Society Symposium (2007)
11. Ren F., Kang B.S., Pearton S.J., Norton D.P., Kwon Y.W., Baik K.H., Louche G., Duran R.S., and Gnanou Y. The use of GaN based electronic and photonic devices for bio-applications. Proceedings of the Electrochemical Society Montreal. Quebec (2005) 211-225
12. Mehandru R., Luo B., Kang B.S., Kim J., Ren F., Pearton S.J., Pan C.C., Chen G.T., and Chyi J.I. AlGaN/GaN HEMT based liquid sensors. Solid-State Electronics 48 (2004) 351-353
13. Lübbers B., Kittler G., Ort P., Linkohr S., Wegener D., Baur B., Gebinoga M., Weise F., Eickhoff M., Maroldt S., Schober A., and Ambacher O. A novel GaN-based multiparameter sensor system for biochemical analysis. Physica Status Solidi 5 (2008) 2361-2363
14. Kittler G., Spitznas A., Luebbers B., Lebedev V., Wegener D., Gebinoga M., Weise F., Schober A., and Ambacher O. AlGaN/GaN-sensors for monitoring of enzyme activity by pH-measurements. Materials Research Society Symposium Materials Research Society (2007)
15. Kang B.S., Wang H.T., Ren F., Pearton S.J., Morey T.E., Dennis D.M., Johnson J.W., Rajagopal P., Roberts J.C., Piner E.L., and Linthicum K.J. Enzymatic glucose detection using ZnO nanorods on the gate region of AlGaN/GaN high electron mobility transistors. Applied Physics Letters 91 (2007) 252103-252113
16. Kang B.S., Wang H.T., Ren F., Hlad M., Gila B.P., Abernathy C.R., Pearton S.J., Li C., Low Z.N., Lin J., Johnson J.W., Rajagopal P., Roberts J.C., Piner E.L., and Linthicum K.J. Role of gate oxide in AlGaN/GaN high-electron-mobility transistor pH sensors. Journal of Electronic Materials 37 (2008) 550-553
17. Kang B.S., Wang H.T., Ren F., Gila B.P., Abernathy C.R., Pearton S.J., Dennis D.M., Johnson J.W., Rajagopal P., Roberts J.C., Piner E.L., and Linthicum K.J. Exhaled-breath detection using AlGaN/GaN high electron mobility transistors integrated with a Peltier element. Electrochemical and Solid-State Letters 11 (2008) J19-J21
18. Kang B.S., Wang H.T., Lele T.P., Tseng Y., Ren F., Pearton S.J., Johnson J.W., Rajagopal P., Roberts J.C., Piner E.L., and Linthicum K.J. Prostate specific antigen detection using AlGaN/GaN high electron mobility transistors. Applied Physics Letters 91 (2007) 112106-112113
19. Kang B.S., Ren F., Wang L., Lofton C., Tan W.W., Pearton S.J., Dabiran A., Osinsky A., and Chow P.P. Electrical detection of immobilized proteins with ungated AlGaN/GaN high-electron-mobility transistors. Applied Physics Letters 87 (2005) 023508-3
20. Kang B.S., Ren F., Kang M.C., Lofton C., Tan W., Pearton S.J., Dabiran A., Osinsky A., and Chow P.P. Detection of halide ions with AlGaN/GaN high electron mobility transistors. Applied Physics Letters 86 (2005) 173502-173503
21. Kang B.S., Ren F., Gila B.P., Abernathy C.R., and Pearton S.J. AlGaN/GaN-based metal oxide semiconductor diode-based hydrogen gas sensor. Applied Physics Letters 84 (2004) 1123-1125
22. Cimalla I., Will F., Tonisch K., Niebelschütz M., Cimalla V., Lebedev V., Kittler G., Himmerlich M., Krischok S., Schaefer J.A., Gebinoga M., Schober A., Friedrich T., and Ambacher O. AlGaN/GaN biosensor-effect of device processing steps on the surface properties and biocompatibility. Sensors and Actuators B: Chemical 123 (2007) 740-748
23. Tanii T., Hosaka T., Miyake T., Zhang G.-J., Zako T., Funatsu T., and Ohdomari I. Preferential immobilization of biomolecules on silicon microstructure array by means of electron beam lithography on organosilane self-assembled monolayer resist. Applied Surface Science 234 (2004) 102-106
24. Omichi K., Niwa D., Motohashi N., Homma T., and Osaka T. Micro and nanoscale patterns of organosilane monolayer templates for applying on-chip ion and biomolecule sensing. Chemical Sensors 20 Supplement B (2004) 626-627
25. Hahn C.D., Leitner C., Weinbrenner T., Schlapak R., Tinazli A., Tampe R., Lackner B., Steindl C., Hinterdorfer P., Gruber H.J., and Holzl M. Self-assembled monolayers with latent aldehydes for protein immobilization. Bioconjugate Chemistry 18 (2007) 247-253
26. Peelen D., and Smith L.M. Immobilization of amine-modified oligonucleotides on aldehyde-terminated alkanethiol monolayers on gold. Langmuir 21 (2005) 266-271
27. Dubrovsky T.B., Hou Z., Stroeve P., and Abbott N.L. Self-assembled monolayers formed on electroless gold deposited on silica gel: a potential stationary phase for biological assays. Analytical Chemistry 71 (1999) 327-332
28. Chu B.H., Kang B.S., Ren F., Chang C.Y., Wang Y.L., Pearton S.J., Glushakov A.V., Dennis D.M., Johnson J.W., Rajagopal P., Roberts J.C., Piner E.L., and Linthicum K.J. Enzyme-based lactic acid detection using AlGaN/GaN high electron mobility transistors with ZnO nanorods grown on the gate region. Applied Physics Letters 93 (2008) 042114-3
29. Chen K.H., Kang B.S., Wang H.T., Lele T.P., Ren F., Wang Y.L., Chang C.Y., Pearton S.J., Dennis D.M., Johnson J.W., Rajagopal P., Roberts J.C., Piner E.L., and Linthicum K.J. c-erbB-2 sensing using AlGaN/GaN high electron mobility transistors for breast cancer detection. Applied Physics Letters 92 (2008) 192103-3
30. Rashband W.S. ImageJ (1997-2008), US National Institutes of Health, Bethesda, MD