Bias-dependent conductive characteristics of individual GeSi quantum dots studied by conductive atomic force microscopy

Nanotechnology

Volumn 22, Issue 9, 2011, Pages

  Wu, R ^a,b   Zhang, S L ^a   Lin, J H ^a   Jiang, Z M ^a   Yang, X J ^a  

^a FUDAN UNIVERSITY   (China)

^b XINJIANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED BIAS; CONDUCTIVE ATOMIC FORCE MICROSCOPY; CURRENT DISTRIBUTION; CURRENT PEAK; DISCRETE ENERGY LEVELS; ELECTRICAL CHARACTERISTIC; FOWLER-NORDHEIM TUNNELING; LOW BIAS; QUANTUM DOT; QUANTUM DOTS; SCHOTTKY EMISSION MODEL; SELF-ASSEMBLED; WETTING LAYER;

ATOMIC FORCE MICROSCOPY; GRAPHIC METHODS; WETTING;

SEMICONDUCTOR QUANTUM DOTS;

GERMANIUM; QUANTUM DOT; SILICON;

ARTICLE; ATOMIC FORCE MICROSCOPY; CHEMISTRY; ELECTRIC CONDUCTIVITY; ELECTROMAGNETIC FIELD; EQUIPMENT; EQUIPMENT DESIGN; INSTRUMENTATION; MATERIALS TESTING; RADIATION EXPOSURE;

ELECTRIC CONDUCTIVITY; ELECTROMAGNETIC FIELDS; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; GERMANIUM; MATERIALS TESTING; MICROSCOPY, ATOMIC FORCE; QUANTUM DOTS; SILICON;

EID: 79751473395     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/9/095708     Document Type: Article

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