Energy levels in doped SiGe quantum well studied by admittance spectroscopy

Applied Surface Science

Volumn 252, Issue 8, 2006, Pages 2776-2781

  Cai, X S ^a   Qin, J ^a   Yang, H B ^a   Yuan, F Y ^a   Fan, Y L ^a   Lu, F ^a   Jiang, Z M ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

Activation energy; Admittance spectroscopy; Heavy doping; Molecular beam epitaxy; Quantum well; SiGe

Indexed keywords

ACTIVATION ENERGY; ADDITION REACTIONS; ELECTRON ENERGY LEVELS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR QUANTUM WELLS; SILICON; SPECTROSCOPIC ANALYSIS;

ADMITTANCE SPECTROSCOPY; HEAVY DOPING; QUANTUM WELL; SIGE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 31144445278     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2005.04.033     Document Type: Article

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