Conductive atomic force microscopy study of self-assembled silicon nanostructures

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 6, 2009, Pages 3051-3054

  Bari, M R ^a   Blaikie, R J ^a   Fang, F ^b   Markwitz, A ^b  

^a UNIVERSITY OF CANTERBURY   (New Zealand)

^b GNS SCIENCE   (New Zealand)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; CMOS-COMPATIBLE TECHNOLOGY; CONDUCTIVE ATOMIC FORCE MICROSCOPY; CURRENT FLOWS; CURRENT VOLTAGE; ELECTRICAL TRANSPORT PROPERTIES; ELECTRONIC DEVICE; FIELD-EMISSION DEVICES; IDEALITY FACTORS; SELF ASSEMBLY PROCESS; SELF-ASSEMBLED; SILICON NANOSTRUCTURES; SPECTROSCOPY MEASUREMENTS;

ATOMIC FORCE MICROSCOPY; COMPUTER CRIME; ELECTRIC PROPERTIES; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; TRANSPORT PROPERTIES;

NANOSTRUCTURES;

EID: 72849142182     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3258147     Document Type: Conference Paper

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