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Volumn 66, Issue 7, 2002, Pages 753361-753366

Imaging of the electronic states of self-assembled InxGa1-xAs quantum dots by scanning tunneling spectroscopy

Author keywords

[No Author keywords available]

Indexed keywords

ARTICLE; ELECTRONICS; GEOMETRY; IMAGE ANALYSIS; MATHEMATICAL ANALYSIS; MEASUREMENT; QUANTUM MECHANICS; SCANNING TUNNELING MICROSCOPY; SPECTROSCOPY;

EID: 0037104197     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.66.075336     Document Type: Article
Times cited : (14)

References (35)
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    • note
    • It is worth noting that the intensity of the current contrast observed in Fig. 3 is exactly what one would expect to see based on the higher currents in the I-V spectra of the QD (see Fig. 2), while the lateral extension and the simmetry of the current contrast inside the QD is due to the tunneling into or out of the confined states localized in the QD, as discussed in Sec. IV.
  • 35
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    • note
    • Current contrast in only the positive bias was reported by Ref. 13, since their samples were p-type doped a similar explanation is probable.


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