Transient hole trapping in individual GeSi quantum dot grown on Si(001) studied by conductive atomic force microscopy

Chinese Physics Letters

Volumn 25, Issue 12, 2008, Pages 4360-4363

  Wu, Rong ^a   Lin, Jian Hui ^a   Zhang, Sheng Li ^a   Yang, Hong Bin ^a   Jiang, Zui Min ^a   Yang, Xin Ju ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; NANOCRYSTALS; SI-GE ALLOYS; SILICON; SUBSTRATES;

BACKWARD VOLTAGE; CONDUCTIVE ATOMIC FORCE MICROSCOPY; CURRENT PEAK; CURRENT-VOLTAGE CHARACTERISTICS; FORWARD SWEEPS; HOLE-TRAPPING; PEAK INTENSITY; SI SUBSTRATES; SWEEP RATES; VOLTAGE SWEEP;

SEMICONDUCTOR QUANTUM DOTS;

EID: 58449132619     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/25/12/049     Document Type: Article

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