Electron transport through individual Ge self-assembled quantum dots on Si

Applied Physics Letters

Volumn 89, Issue 8, 2006, Pages

  Chung, Hung Chin ^a   Chu, Wen Huei ^a   Liu, Chuan Pu ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC PROPERTIES; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; ION BEAMS; SELF ASSEMBLY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SPUTTERING; TRANSMISSION ELECTRON MICROSCOPY; ULTRAHIGH VACUUM;

ION ENERGY; QUANTIZED ENERGY LEVEL; ROOM TEMPERATURE; ULTRAHIGH-VACUUM ION BEAM SPUTTERING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33748115111     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2338004     Document Type: Article

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