Effects of a native oxide layer on the conductive atomic force microscopy measurements of self-assembled Ge quantum dots

Nanotechnology

Volumn 17, Issue 20, 2006, Pages 5111-5116

  Wu, R ^a   Li, F H ^a   Jiang, Z M ^a   Yang, X J ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTIVE PROPERTIES; ELECTRICAL PROPERTIES; FOWLER-NORDHEIM TUNNELLING; SCHOTTKY EMISSION MODEL;

ATOMIC FORCE MICROSCOPY; ELECTRON TUNNELING; ETCHING; GERMANIUM COMPOUNDS; MATHEMATICAL MODELS; SELF ASSEMBLY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33749506056     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/17/20/012     Document Type: Article

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