Giant random telegraph signal generated by single charge trapping in submicron n -metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics

Volumn 103, Issue 12, 2008, Pages

  Prati, Enrico ^a   Fanciulli, Marco ^a   Ferrari, Giorgio ^b   Sampietro, Marco ^b  

^a LABORATORIO MDM   (Italy)

^b POLITECNICO DI MILANO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPPING; DIELECTRIC DEVICES; DRAIN CURRENT; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; FIELD EFFECT TRANSISTORS; ION BEAMS; KETONES; METALS; MOSFET DEVICES; PHOTOACOUSTIC EFFECT; SEMICONDUCTOR MATERIALS; TELEGRAPH;

AMERICAN INSTITUTE OF PHYSICS (AIP); CHANNEL WIDTH (WC); CONDUCTION CHANNELS; CRYOGENIC TEMPERATURES; CURRENT FLUCTUATIONS; GATE VOLTAGES; METAL-OXIDE SEMICONDUCTOR (MOS); MOSFETS; QUASI ONE DIMENSIONAL (Q1D); RANDOM TELEGRAPH SIGNAL (RTS); ROOM-TEMPERATURE (RT); SUB MICRONS;

TRANSISTORS;

EID: 46449133842     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2939272     Document Type: Article

References (24)

1. E. Simoen and C. Claeys, Mater. Sci. Eng., B 91-92, 136 (2002).
2. K. S. Ralls, W. J. Skocpol, L. D. Jackel, R. E. Howard, L. A. Fetter, R. W. Epworth, and D. M. Tennant, Phys. Rev. Lett. 52, 228 (1984).
3. K. Kandiah, M. O. Deighton, and F. B. Whiting, J. Appl. Phys. 66, 93 (1989).
4. M. J. Uren, D. J. Day, and M. J. Kirton, Appl. Phys. Lett. 47, 1195 (1985).
5. A. Palma, A. Godoy, J. A. Jiḿnez-Tejada, J. E. Carceller, and J. A. López-Villanueva, Phys. Rev. B 56, 9565 (1997).
6. R. Vrijen, E. Yablonovitch, K. Wang, H. W. Jiang, A. Balandin, V. Roychowdhury, T. Mor, and D. DiVincenzo, Phys. Rev. A 62, 012306 (2000).
7. I. Martin, D. Mozyrsky, and H. W. Jiang, Phys. Rev. Lett. 90, 018301 (2003).
8. M. Xiao, I. Martin, E. Yablonovitch, and H. W. Jiang, Nature (London) 430, 435 (2004).
9. E. Prati, M. Fanciulli, A. Calderoni, G. Ferrari, and M. Sampietro, Phys. Lett. A 370, 491 (2007).
10. M. Fanciulli, E. Prati, G. Ferrari, and M. Sampietro, AIP Conf. Proc. 800, 125 (2005).
11. E. Prati and M. Fanciulli, Phys. Lett. A 372, 3102 (2008).
12. G. Ferrari, L. Fumagalli, M. Sampietro, E. Prati, and M. Fanciulli, J. Appl. Phys. 98, 044505 (2005).
13. E. Prati, M. Fanciulli, A. Calderoni, G. Ferrari, and M. Sampietro J. Appl. Phys. 103, 104503 (2008).
14. J. M. Elzerman, R. Hanson, L. H. Willems van Beveren, B. Witkamp, L. M. K. Vandersypen, and L. P. Kouwenhoven, Nature (London) 430, 431 (2004).
15. F. H. L. Koppens, C. Buizert, K. J. Tielrooij, I. T. Vink, K. C. Novack, T. Meunier, L. P. Kouwenhoven, and L. M. K. Vandersypen, Nature (London) 442, 766 (2006).
16. H. M. Bu, X. L. Shi, X. L. Yuan, Y. D. Zheng, S. H. Gu, H. Majima, H. Ishikuro, and T. Hiramoto, Appl. Phys. A: Mater. Sci. Process. 71, 133 (2000).
17. A. Lee, A. R. Brown, A. Asenov, and S. Roy, Superlattices Microstruct. 34, 293 (2003).
18. C. L. Alexander, A. R. Brown, J. R. Waiting, and A. Asenov, IEEE Trans. Nanotechnol. 4, 339 (2005).
19. A. B. Fowler, G. L. Timp, J. J. Wainer, and R. A. Webb, Phys. Rev. Lett. 57, 138 (1986).
20. W. Xue and P. A. Lee, Phys. Rev. B 38, 3913 (1988).
21. T. E. Kopley, P. L. McEuen, and R. G. Wheeler, Phys. Rev. Lett. 61, 1654 (1988).
22. E. Prati, M. Fanciulli, G. Ferrari, and M. Sampietro, Phys. Rev. B 74, 033309 (2006).
23. P. Fantini, A. Ghetti, A. Marinoni, G. Ghidini, A. Visconti, and A. Marmiroli, IEEE Electron Device Lett. 28, 1114 (2007).
24. H. H. Muller and M. Schulz, J. Appl. Phys. 83, 1734 (1998).