Accurate two-dimensional modelling of the titanium silicide process with an application to a thin base n-p-n bipolar transistor

Microelectronics Journal

Volumn 29, Issue 3, 1998, Pages 71-81

  Fornara, P ^a   Denorme, S ^a   De Berranger, E ^a,b   Mathiot, D ^a   Mouis, M ^a,b   Poncet, A ^a  

^a ORANGE LABS   (France)

^b INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; COMPUTER SIMULATION; MATHEMATICAL MODELS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH;

DOPANT REDISTRIBUTION; SELF ALIGNED SILICIDE PROCESS; SILICIDATION; TOPOGRAPHY;

MICROELECTRONIC PROCESSING;

EID: 0032017740     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2692(97)00019-0     Document Type: Article

References (23)

1. Borucki, L., Mann, R., Miles, G., Slinkman, J. and Sullivan, T. A model for titanium silicide film growth, IEDM Conf. Proc., 1988, p. 348.
2. Li, C.M., Crandle, T., Temkin, M. and Hopper, P. A two dimensional process model for silicide growth, VPAD Conf. Proc., Jap. Soc. Appl. Phys., 1993, p. 68.
3. Kai, K., Kuroda, S. and Nishi, K. Two-dimensional modeling of self-aligned suicide process with a general-purpose process simulator OPUS, VPAD Conf Proc., Jap. Soc. Appl. Phys., 1993, p. 66.
4. Murarka, S.P. Silicides for VLSI Applications, Academic Press, New York, 1983.
5. 2 formation by thin Ti films on Si, Appl. Phys., 549 (1983) 5076.
6. y, under rapid thermal annealing, J. Appl. Phys., 641 (1988) 344.
7. 2 formation at rapid thermal annealing rate, J. Appl. Phys., 72 (1992) 4978.
8. Deal, B.E. and Grove, A.S. General relationship for the thermal oxidation of silicon, J. Appl. Phys., 3612 (1965) 3770.
9. Poncet, A. Finite-element simulation of local oxidation of silicon, IEEE Trans. C.A.D., CAD-41 (1985) 41.
10. 2 on narrow poly-Si lines, Microelectronic Eng., 14 (1991) 327.
11. Kai, K., Sakakura, H., Furoda, K., Ohtomo, A., Ida, J. and Nishi, K. Impact of drain profiles on Ti-salicided pMOSFET characteristics analyzed by a first comprehensive coupled process/device simulator for salicided MOSFETs, IEDM Conf. Proc., 1993, p. 709.
12. Cea, S. and Law, M.E. Two dimensional simulation of silicide growth and flow, NUPAD V Conf. Proc., 1994, p. 113.
13. 2 thin films, J. Mater. Res., 45 (1989) 1209.
14. Mathiot, D. and Martin, S. Modeling of dopant diffusion in silicon: an effective diffusivity approach including point-defects couplings, J. Appl. Phys., 706 (1991) 3071.
15. Wen, D.S., Smith, P., Osburn, C.M. and Rozgonyi, G.A. Elimination of end-of-range shallow junction implantation damage during CMOS titanium silicidation, J. Electrochem. Soc., 1362 (1989) 466.
16. Honeycutt, J.W. and Rozgonyi, G.A. Enhanced diffusion of Sb-doped layers during Co and Ti reactions with Si, Appl. Phys. Lett., 5812 (1991) 1302.
17. Lorenz, J., Hill, C., Jaouen, H., Lombardi, C., Lyden, C., de Meyer, K., Pelka, J., Poncet, A., Rudan, M. and Solmi, S. The STORM technology CAD system, Microelectronics J., 26 (1995) 113.
18. Van Dort, M.J. A high-resolution study of two-dimensional oxydation-enhanced diffusion in silicon, Proc. IEDM, 93 (1993) 299.
19. Denonne, S., Mathiot, D., Dolfus, P. and Mouis, M. Two-dimensional modeling of the enhanced diffusion in thin base n-p-n bipolar transistors after lateral ion implantations, IEEE Trans. Electron Devices, 423 (1995) 523.
20. Mazuré, C. and Orlowski, M. Guidelines for reverse short-channel behavior, IEEE Electron Device Lett., 1012 (1989) 556.
21. Boussetta, H., Giroult-Matlakowski, G., Le Tron, B., Dutartre, D., Warren, P., Bouzid, M.J. and Chantre, A. Identification of peripheral base currents in (Si or SiGe) epitaxial-base single-polysilicon self-aligned bipolar transistors, Proc. ESSDERC'94, Editions Frontieres, 1994, p. 63.
22. Hu, S.M. Point defect generation and enhanced diffusion in silicon due to tantalum silicide overlays, Appl. Phys. Lett., 515 (1987) 308.
23. Xu, D.-X., Peters, C.J., Noël, J., Rolfe, S.J. and Tarr, N.G. Control of anomalous boron diffusion in the base of Si/SiGe/Si heterojunction bipolar transistors using PtSi, Appl. Phys. Lett., 64 (1994) 3270.