Growth of InN films and nanostructures by MOVPE

Journal of Crystal Growth

Volumn 311, Issue 10, 2009, Pages 2761-2766

  Briot, O ^a   Ruffenach, S ^a   Moret, M ^a   Gil, B ^a   Giesen, Ch ^b   Heuken, M ^b   Rushworth, S ^c   Leese, T ^c   Succi, M ^d  

^a UNIVERSITÉ MONTPELLIER 2   (France)

^b AIXTRON AG   (Germany)

^c SAFC Hitech   (United Kingdom)

^d SAES GETTERS S P A   (Italy)

Author keywords

A3. MOCVD; B1. InN

Indexed keywords

A3. MOCVD; B1. INN; CARBON HALIDES; CRYSTAL QUALITIES; GROUP III NITRIDES; INN FILMS; LATERAL GROWTH; LATTICE-MATCHED SUBSTRATES; METAL-ORGANIC VAPOR PHASE EPITAXY; MOVPE; MOVPE GROWTH; NEW PROCESS; RECRYSTALLIZATION; RESEARCH EFFORTS;

CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; MOLECULAR BEAMS; MOLECULAR DYNAMICS; NANOSTRUCTURES; NITRIDES; ORGANOMETALLICS; SEMICONDUCTOR GROWTH; SUPERCONDUCTING FILMS;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 65949084940     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.01.037     Document Type: Article

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