Microstructure and tunneling magnetoresistance with spin switching in the Co/AlOx/CoFeB cross-strip junctions

Journal of Alloys and Compounds

Volumn 485, Issue 1-2, 2009, Pages 822-825

  Chen, Yuan Tsung ^a   Tseng, Jiun Yi ^b   Jian, S R ^a   Chen, H G ^a   Jen, S U ^b  

^a I SHOU UNIVERSITY   (Taiwan)

^b INSTITUTE OF PHYSICS   (Taiwan)

Author keywords

Interfacial roughness; Magnetic tunneling junction; spin switching field; Tunneling magnetoresistance

Indexed keywords

BARRIER HEIGHTS; BARRIER THICKNESS; CROSS-SECTIONAL TEM; CROSS-STRIP; CURRENT VOLTAGE CURVE; DEPOSITION SEQUENCES; FACE CENTERED CUBIC STRUCTURE; GLASS SUBSTRATES; I - V CURVE; INTERFACIAL ROUGHNESS; MAGNETIC TUNNELING JUNCTIONS; QUANTUM TUNNELING; ROOM TEMPERATURE; SPIN SWITCHING; SPIN SWITCHING FIELD; SWITCHING FIELD; TEM; TUNNELING BARRIER; TUNNELING MAGNETORESISTANCE; VIBRATING SAMPLE MAGNETOMETER; XRD;

COBALT COMPOUNDS; ELECTRIC RESISTANCE; MAGNETIC DEVICES; MAGNETIC FIELD EFFECTS; MAGNETOELECTRONICS; MAGNETORESISTANCE; MICROSTRUCTURE; SPIN DYNAMICS; SWITCHING; TRANSMISSION ELECTRON MICROSCOPY; WAVEGUIDE JUNCTIONS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

WIND TUNNELS;

EID: 72049109169     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2009.06.081     Document Type: Article

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