메뉴 건너뛰기




Volumn 55, Issue 7, 2008, Pages 1782-1786

Effects of switching parameters on resistive switching behaviors of polycrystalline SrZrO3:Cr-based metal-oxide-metal structures

Author keywords

Conduction path; Energy dependence; Resistive switching; SrZrO3:Cr

Indexed keywords

POLY CRYSTALLINE; RESISTIVE SWITCHING; SWITCHING PARAMETERS;

EID: 46649103253     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.924442     Document Type: Article
Times cited : (7)

References (14)
  • 5
    • 0001331485 scopus 로고    scopus 로고
    • Reproducible switching effect in thin oxide films for memory applications
    • Jul
    • A. Beck, J. G. Bednorz, C. Gerber, C. Rossel, and D. Widmer, "Reproducible switching effect in thin oxide films for memory applications," Appl. Phys. Lett., vol. 77, no. 1, pp. 139-141, Jul. 2000.
    • (2000) Appl. Phys. Lett , vol.77 , Issue.1 , pp. 139-141
    • Beck, A.1    Bednorz, J.G.2    Gerber, C.3    Rossel, C.4    Widmer, D.5
  • 6
    • 0035883782 scopus 로고    scopus 로고
    • Electrical current distribution across a metal-insulator-metal structure during bistable switching
    • Sep
    • C. Rossel, G. I. Meijer, D. Bremaud, and D. Widmer, "Electrical current distribution across a metal-insulator-metal structure during bistable switching," J. Appl. Phys., vol. 90, no. 6, p. 2892, Sep. 2001.
    • (2001) J. Appl. Phys , vol.90 , Issue.6 , pp. 2892
    • Rossel, C.1    Meijer, G.I.2    Bremaud, D.3    Widmer, D.4
  • 9
    • 0000748226 scopus 로고    scopus 로고
    • Electric-pulse-induced reversible resistance change effect in magnetoresistive films
    • May
    • S. Q. Liu, N. J. Wu, and A. Ignatiev, "Electric-pulse-induced reversible resistance change effect in magnetoresistive films," Appl. Phys. Lett., vol. 76, no. 19, p. 2749, May 2000.
    • (2000) Appl. Phys. Lett , vol.76 , Issue.19 , pp. 2749
    • Liu, S.Q.1    Wu, N.J.2    Ignatiev, A.3
  • 11
    • 2942548117 scopus 로고    scopus 로고
    • Nonvolatile memory with multilevel switching: A basic model
    • Apr
    • M. J. Rozenberg, I. H. Inoue, and M. J. Sánchez, "Nonvolatile memory with multilevel switching: A basic model," Phys. Rev. Lett., vol. 92, no. 17, p. 178 302, Apr. 2004.
    • (2004) Phys. Rev. Lett , vol.92 , Issue.17 , pp. 178-302
    • Rozenberg, M.J.1    Inoue, I.H.2    Sánchez, M.J.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.