Fabrication of silicon nanowires with precise diameter control using metal nanodot arrays as a hard mask blocking material in chemical etching

Chemistry of Materials

Volumn 22, Issue 13, 2010, Pages 4111-4116

  Huang, Jinquan ^a   Chiam, Sing Yang ^b   Tan, Hui Huang ^a   Wang, Shijie ^b   Chim, Wai Kin ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

AAO TEMPLATE; ANODIC ALUMINUM OXIDE; CATALYTIC ETCHING; CHEMICAL ETCHING; CHEMICAL WET ETCHING; CONTROLLABLE DIAMETER; COST-EFFECTIVE METHODS; DIAMETER CONTROL; FABRICATION PROCEDURE; GOLD CATALYSTS; HARD MASKS; HIGH DENSITY; METAL NANO DOTS; NANODOTS; PORE DIAMETERS; SAMPLE SURFACE; SI NANOSTRUCTURES; SILICON NANOWIRES; UNIFORM DIAMETER; WELL-ALIGNED;

ALUMINUM COATINGS; DEIONIZED WATER; FABRICATION; HYDROFLUORIC ACID; HYDROGEN PEROXIDE; METALLIC COMPOUNDS; NANOWIRES; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS;

WET ETCHING;

EID: 78651309015     PISSN: 08974756     EISSN: 15205002     Source Type: Journal    
DOI: 10.1021/cm101121c     Document Type: Article

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