Densely packed arrays of ultra-high-as pect-ratio silicon nanowires fabricated using block-copolymer lithography and metal-assisted etching

Advanced Functional Materials

Volumn 19, Issue 15, 2009, Pages 2495-2500

  Chang, Shih Wei ^a   Chuang, Vivian P ^a   Boles, Steven T ^a   Ross, Caroline A ^a   Thompson, Carl V ^a  

^a USA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRITICAL POINT DRYING; CRYSTALLOGRAPHIC ORIENTATIONS; HEXAGONAL ORDER; HIGH ASPECT RATIO; IN-CHANNELS; MEAN DIAMETER; NEW PROCESS; PACKED ARRAYS; SENSING DEVICES; SILICON NANOWIRES; SINGLE CRYSTAL SILICON; STANDARD DEVIATION; TOPOGRAPHIC FEATURES; ULTRA-HIGH; WIRE ARRAYS; WIRE DIAMETER;

ASPECT RATIO; BLOCK COPOLYMERS; CARPET MANUFACTURE; COPOLYMERIZATION; CRYSTAL ORIENTATION; ELECTRIC WIRE; EQUATIONS OF STATE; ETCHING; FABRICATION; NANOWIRES; SENSORS;

SINGLE CRYSTALS;

EID: 68249126857     PISSN: 1616301X     EISSN: 16163028     Source Type: Journal    
DOI: 10.1002/adfm.200900181     Document Type: Article

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