Wafer-scale patterning of sub-40 nm diameter and high aspect ratio (>50:1) silicon pillar arrays by nanoimprint and etching

Nanotechnology

Volumn 19, Issue 34, 2008, Pages

  Morton, Keith J ^a   Nieberg, Gregory ^a   Bai, Shufeng ^a   Chou, Stephen Y ^a  

^a Princeton University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; ETCHING; FLUID MECHANICS; NANOIMPRINT LITHOGRAPHY; NONMETALS; OPTICAL DESIGN; PHOTORESISTS; PLANTS (BOTANY); PRESSURE DROP; REACTIVE ION ETCHING; SILICON; SILICON WAFERS;

CYCLE TIMES; DEEP REACTIVE ION ETCHING (DRIV); DRIE ETCHING; GAS FLOWING; HIGH ASPECT RATIO (HAR); LONG RANGE ORDER (LRO); NANO IMPRINT LITHOGRAPHY (NIL); NANO IMPRINTS; NANO PILLARS; SIDEWALL ROUGHNESS (SWR); SILICON PILLARS; SQUARE LATTICES; SUB-50 NM; WAFER-SCALE; WIDE AREA;

ASPECT RATIO;

NANOWIRE; SILICON DIOXIDE;

ARTICLE; DEEP REACTIVE ION ETCHING; ELECTRON; GAS FLOW; NANOANALYSIS; NANOIMPRINT LITHOGRAPHY; NANOTECHNOLOGY; PRIORITY JOURNAL; SCANNING ELECTRON MICROSCOPY;

EID: 48249084995     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/19/34/345301     Document Type: Article

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