Sub-20 nm Si/Ge superlattice nanowires by metal-assisted etching

Nano Letters

Volumn 9, Issue 9, 2009, Pages 3106-3110

  Geyer, Nadine ^a   Huang, Zhipeng ^a,c   Fuhrmann, Bodo ^b   Grimm, Silko ^a   Reiche, Manfred ^a   Nguyen Duc, Trung Kien ^a   De Boor, Johannes ^a   Leipner, Hartmut S ^b   Werner, Peter ^a   Gösele, Ulrich ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b MARTIN LUTHER UNIVERSITY HALLE WITTENBERG   (Germany)

^c JIANGSU UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC ALUMINUM OXIDE; AREA DENSITY; CHEMICAL WET ETCHING; PRE-PATTERNING; SI/GE SUPERLATTICES; VERTICALLY ALIGNED;

ALUMINA; CHEMICAL BEAM EPITAXY; CRYSTAL GROWTH; ETCHING; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOWIRES; SUPERLATTICES;

ELECTRIC WIRE;

ALUMINUM OXIDE; GERMANIUM; NANOWIRE; SILICON; SILVER;

ARTICLE; ARTIFICIAL MEMBRANE; CHEMISTRY; NANOTECHNOLOGY; PARTICLE SIZE; SEMICONDUCTOR; SURFACE PROPERTY; ULTRASTRUCTURE;

ALUMINUM OXIDE; GERMANIUM; MEMBRANES, ARTIFICIAL; NANOTECHNOLOGY; NANOWIRES; PARTICLE SIZE; SEMICONDUCTORS; SILICON; SILVER; SURFACE PROPERTIES;

EID: 70349939679     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl900751g     Document Type: Article

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